Details

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BUY FMMT489TA https://www.utsource.net/itm/p/11287552.html
FMMT489TA NPN Transistors(BJT) 50V 1A 150MHz 100~300 600mV/0.6V SOT-23/SC-59 marking 489

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 150 mA, IB = 0	-	-	30	V
Emitter-Collector Voltage	VEBO	IE = 5 mA, IC = 0	-	-	5	V
Base-Emitter Voltage	VBE	IC = 150 mA, IB = 15 mA	-	0.7	-	V
Collector Current	IC	VCE = 30 V	-	150	-	mA
Base Current	IB	VCE = 30 V, IC = 150 mA	-	15	-	mA
DC Current Gain	hFE	IC = 150 mA, VCE = 10 V	100	300	-	-
Transition Frequency	fT	IC = 150 mA, VCE = 10 V	-	250	-	MHz
Storage Temperature Range	TSTG	-	-65	-	150	掳C
Operating Junction Temperature	TJ	-	-65	-	150	掳C

Instructions for Use:

1. Handling:

   • Handle with care to avoid static damage.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper alignment of the pins during mounting.
   • Use recommended soldering temperatures and times to avoid thermal stress on the device.

3. Biasing:

   • Ensure that the base-emitter voltage (V_BE) is within the specified range to avoid damage.
   • Keep the collector current (I_C) within the maximum ratings to prevent overheating and failure.

4. Operating Conditions:

   • Operate the device within the specified temperature ranges to ensure reliable performance.
   • Monitor the junction temperature (T_J) to avoid exceeding the maximum operating temperature.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Follow the storage temperature range (T_STG) to maintain the integrity of the device.

6. Testing:

   • Use the specified test conditions to accurately measure the parameters of the device.
   • Refer to the datasheet for detailed testing procedures and equipment requirements.

(For reference only)