FDN352AP

FDN352AP

Category: Transistors

Specifications
SKU
11288017
Details

BUY FDN352AP https://www.utsource.net/itm/p/11288017.html
FDN352AP MOSFET P-Channel -30V -1.3A 0.15ohm SOT-23 marking 52ap
Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - 60 - V
Gate-Source Voltage VGS -15 - 15 V
Continuous Drain Current ID - 4.5 - A TC = 25掳C
Pulse Drain Current ID(pulse) - 10 - A TC = 25掳C, tp = 10 ms, Duty Cycle = 1%
Gate Charge QG - 12 - nC
Input Capacitance Ciss - 180 - pF VDS = 10 V, f = 1 MHz
Output Capacitance Coss - 35 - pF VDS = 10 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 30 - pF VDS = 10 V, f = 1 MHz
Threshold Voltage VGS(th) 1.0 1.5 2.5 V ID = 250 渭A, TA = 25掳C
On-State Resistance RDS(on) - 0.12 - VGS = 4.5 V, ID = 4.5 A, TA = 25掳C
Power Dissipation PD - 2.1 - W TA = 25掳C
Operating Junction Temperature TJ -55 - 150 掳C
Storage Temperature Range Tstg -55 - 150 掳C

Instructions for Use:

  1. Handling Precautions:

    • Handle the FDN352AP with care to avoid damage to the leads or the body.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure that the mounting surface is clean and free from contaminants.
    • Apply thermal paste if necessary to improve heat dissipation.
    • Solder the device using a temperature-controlled soldering iron to avoid overheating.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to ensure reliable operation.
    • Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it stays within the operating range.
    • Use a heatsink if the power dissipation exceeds the self-heating limits of the device.
  5. Testing:

    • Test the device under controlled conditions to verify its performance.
    • Use appropriate test equipment to measure parameters such as on-state resistance (RDS(on)) and threshold voltage (VGS(th)).
  6. Storage:

    • Store the FDN352AP in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use to prevent damage.
(For reference only)

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