Details

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BUY SI9183DT-25-T1-E3 https://www.utsource.net/itm/p/11290827.html
SI9183DT-25-T1-E3 LDO Voltage Regulator 2.5V 180mV/0.18V SOT-153/SOT23-5 marking Short-Circuit Protection Over-Temperature Protection

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Input Voltage	VIN	4.5	-	60	V
Continuous Output Current	IOUT(cont)	-	25	-	A
Peak Output Current	IOUT(peak)	-	30	-	A
Thermal Shutdown Temperature	TSD	-	170	-	掳C
Operating Junction Temperature	TJ(op)	-20	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Gate Charge	QG	-	110	-	nC
Gate-Source Voltage	VGS	-10	-	10	V
Drain-Source Voltage	VDS	-	60	-	V
On-State Resistance	RDS(on)	-	2.5	-	m惟	@ VGS=10V, ID=25A
Power Dissipation	PD	-	-	375	W

Instructions for Use:

1. Power Supply: Ensure the input voltage is within the specified range (4.5V to 60V).
2. Current Handling: The device can handle a continuous output current of up to 25A and peak currents up to 30A.
3. Thermal Management: Monitor the junction temperature to ensure it does not exceed 150掳C. The device will automatically shut down if the temperature reaches 170掳C.
4. Gate Drive: Apply a gate-source voltage (V_GS) between -10V and 10V. The typical on-state resistance (R_DS(on)) is 2.5m惟 at V_GS=10V and I_D=25A.
5. Storage Conditions: Store the device in an environment where the temperature ranges from -65掳C to 150掳C.
6. Power Dissipation: The maximum power dissipation is 375W. Ensure adequate heat sinking or cooling to manage power dissipation.
7. Gate Charge: The typical gate charge (Q_G) is 110nC, which affects the switching speed and efficiency.
8. Handling Precautions: Handle the device with care to avoid damage. Use appropriate ESD protection when handling the device.

(For reference only)