Details

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BUY 3SK195 https://www.utsource.net/itm/p/11293887.html
3SK195 MOSFET N-Channel 13.5V 30mA SOT-143/SOT-24/SC-61 marking UJ Superior cross modulation performance/Low reverse transfer capacitance/low noise gain control amplifier

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCE	-	-	600	V	Maximum voltage between collector and emitter with base open
Emitter-Collector Voltage	VEC	-	-	600	V	Maximum voltage between emitter and collector with base open
Base-Emitter Voltage	VBE	-2.5	-	2.5	V	Maximum voltage between base and emitter
Collector Current	IC	-	-	8	A	Maximum continuous collector current
Base Current	IB	-	-	2	A	Maximum continuous base current
Power Dissipation	PT	-	-	120	W	Maximum power dissipation (at TA = 25掳C)
Junction Temperature	TJ	-	-	150	掳C	Maximum junction temperature
Storage Temperature	TSTG	-55	-	150	掳C	Operating and storage temperature range
Transition Frequency	fT	-	3	-	MHz	Frequency at which the current gain drops to 1
DC Current Gain	hFE	20	50	100	-	DC current gain (at IC = 1A, VCE = 10V)

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
   • Use appropriate heat sinks to manage the power dissipation, especially when operating near the maximum power rating.

2. Mounting:

   • Ensure proper thermal contact with the heat sink by using thermal paste or a similar material.
   • Tighten the mounting screws to the recommended torque to avoid mechanical stress on the device.

3. Biasing:

   • For optimal performance, bias the transistor within the specified DC current gain range.
   • Use a suitable base resistor to limit the base current and protect the transistor from excessive base-emitter voltage.

4. Operational Environment:

   • Operate the transistor within the specified temperature range to ensure reliable performance.
   • Protect the device from moisture and corrosive environments to prevent degradation.

5. Testing:

   • When testing the device, use a low-power signal initially to verify correct operation before applying full power.
   • Monitor the junction temperature during operation to ensure it does not exceed the maximum allowed value.

6. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
   • Handle the device with care to avoid physical damage, especially to the leads and body.

By following these guidelines, you can ensure the reliable and efficient operation of the 3SK195 transistor.

(For reference only)