2SK210-GR

2SK210-GR

Category: Transistors

Specifications
SKU
11296432
Details

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2SK210-GR JFET N-Channel 18v 6~14mA SOT-23 marking YG FM TUNER VHF BAND amplifier
Parameter Symbol Value Unit
Drain-to-Source Breakdown Voltage V(BR)DSS 200 V
Gate-to-Source Breakdown Voltage V(BR)GSS 卤30 V
Continuous Drain Current (Tc = 25掳C) ID 2.0 A
Continuous Drain Current (Tc = 100掳C) ID 1.4 A
Pulse Drain Current (Tc = 25掳C, t = 10 渭s) IDM 6.0 A
Total Dissipation (Tc = 25掳C) PD 40 W
Junction Temperature TJ -55 to +150 掳C
Storage Temperature TSTG -55 to +150 掳C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within the specified range.
    • Use appropriate mounting hardware to secure the device.
  2. Biasing:

    • Apply gate-to-source voltage (VGS) within the specified breakdown voltage limits to avoid damage.
    • For optimal performance, operate within the recommended operating conditions.
  3. Handling:

    • Handle with care to prevent mechanical stress and static damage.
    • Store in a dry, cool environment to prevent moisture damage.
  4. Testing:

    • Use a suitable test setup to measure parameters accurately.
    • Follow standard testing procedures to ensure reliable results.
  5. Soldering:

    • Use a controlled soldering process to avoid overheating the device.
    • Ensure the soldering iron is properly grounded to prevent electrostatic discharge.
  6. Circuit Design:

    • Incorporate necessary protection circuits such as overvoltage and overcurrent protection.
    • Consider the thermal resistance and power dissipation when designing the circuit.
  7. Safety:

    • Always follow safety guidelines when handling high-voltage and high-power components.
    • Use appropriate personal protective equipment (PPE) when working with electrical circuits.
(For reference only)

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