Details

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BUY W21NM50N https://www.utsource.net/itm/p/11300684.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-State Resistance	RDS(on)	-	0.12	-	Ω	At VGS = 10V, ID = 5A
Gate-Source Voltage	VGS(th)	1.0	2.0	4.0	V	Gate threshold voltage
Continuous Drain Current	ID	-	-	50	A	At Tc = 25°C
Pulse Drain Current	IDM	-	-	100	A	Pulse duration 10ms, duty cycle 1%
Power Dissipation	PD	-	-	125	W	At TC = 25°C
Junction Temperature	TJ	-25	-	175	°C	Operating junction temperature
Storage Temperature	TSTG	-55	-	150	°C	Storage temperature range

Instructions for Use:

1. Handling Precautions: The W21NM50N is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection during handling and installation.
2. Mounting: Ensure the device is mounted with adequate heat sinking if operating at high power levels to maintain junction temperature within specified limits.
3. Gate Drive: Apply gate-source voltage within the specified range to avoid damage or improper operation. Ensure VGS does not exceed the maximum rating.
4. Current Limitation: Do not exceed the continuous or pulse drain current ratings. Exceeding these can lead to device failure.
5. Thermal Management: Monitor the junction temperature and ensure it remains within the operational range to prevent thermal runaway.
6. Storage Conditions: Store in a dry environment within the specified storage temperature range to prevent damage.
7. Soldering: Follow recommended soldering profiles to avoid thermal shock and potential damage to the device.

(For reference only)