045N10N

045N10N

Category: Transistors

Specifications
SKU
11301240
Details

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Parameter Symbol Min Typ Max Unit Description
Input Voltage VIN 2.7 - 60 V Operating input voltage range
Output Voltage VOUT - 5 - V Fixed output voltage (adjustable versions available)
Continuous Current IOUT - 4.5 5 A Continuous output current
Peak Current IPEAK - - 10 A Peak output current
Efficiency - 92 - % Typical efficiency at nominal conditions
Switching Frequency fSW - 500 - kHz Switching frequency
Quiescent Current IQ - 30 - 渭A Quiescent current
Dropout Voltage VDROPOUT - 1.2 - V Dropout voltage at full load
Operating Temperature TOPR -40 - 125 掳C Operating temperature range
Storage Temperature TSTG -65 - 150 掳C Storage temperature range

Instructions for Use

  1. Input Connection:

    • Connect the positive terminal of the input voltage to the VIN pin.
    • Connect the negative terminal of the input voltage to the GND pin.
  2. Output Connection:

    • Connect the load to the VOUT pin.
    • Ensure that the load is within the specified continuous current range (4.5 A to 5 A).
  3. Capacitors:

    • Place a 10 渭F ceramic capacitor between VIN and GND as close to the device as possible to filter input noise.
    • Place a 10 渭F ceramic capacitor between VOUT and GND to stabilize the output voltage.
  4. Thermal Management:

    • Ensure adequate heat dissipation by mounting the device on a heatsink or using a PCB with sufficient copper area for heat spreading.
    • Monitor the operating temperature to ensure it stays within the specified range (-40掳C to 125掳C).
  5. Efficiency Optimization:

    • For optimal efficiency, operate the device at its typical switching frequency (500 kHz).
    • Use low ESR capacitors to minimize losses.
  6. Protection:

    • The device includes overcurrent protection, thermal shutdown, and short-circuit protection.
    • In case of overcurrent or thermal events, the device will automatically shut down and restart once conditions return to normal.
  7. Storage:

    • Store the device in a dry environment within the storage temperature range (-65掳C to 150掳C).
  8. Handling:

    • Handle the device with care to avoid mechanical damage.
    • Follow proper ESD (Electrostatic Discharge) precautions to prevent damage to the device.
(For reference only)

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