Details
BUY IXFH80N65X2 https://www.utsource.net/itm/p/11301446.html
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDSS | - | 650 | - | V | |
Gate-Source Voltage | VGSS | -15 | - | 15 | V | |
Continuous Drain Current | ID | - | 80 | - | A | TC = 25掳C |
Continuous Drain Current | ID | - | 47 | - | A | TC = 100掳C |
Pulse Drain Current | IDM | - | 240 | - | A | TC = 25掳C, tp = 10 渭s, IGT = 10 A |
Total Power Dissipation | PTOT | - | 190 | - | W | TC = 25掳C |
Junction Temperature | TJ | - | - | 150 | 掳C | |
Storage Temperature Range | TSTG | -55 | - | 150 | 掳C | |
Gate Charge | QG | - | 60 | - | nC | VGS = 15 V, ID = 80 A |
Input Capacitance | Ciss | - | 2200 | - | pF | VDS = 400 V, f = 1 MHz |
Output Capacitance | Coss | - | 330 | - | pF | VDS = 400 V, f = 1 MHz |
Reverse Transfer Capacitance | Crss | - | 110 | - | pF | VDS = 400 V, f = 1 MHz |
Threshold Voltage | VGS(th) | 2.5 | 4 | 5.5 | V | ID = 250 渭A, TA = 25掳C |
On-State Resistance | RDS(on) | - | 0.75 | - | 惟 | VGS = 10 V, ID = 80 A, TA = 25掳C |
Turn-On Delay Time | td(on) | - | 35 | - | ns | VGS = 15 V, ID = 80 A, Rg = 3.3 惟 |
Rise Time | tr | - | 55 | - | ns | VGS = 15 V, ID = 80 A, Rg = 3.3 惟 |
Turn-Off Delay Time | td(off) | - | 25 | - | ns | VGS = 15 V, ID = 80 A, Rg = 3.3 惟 |
Fall Time | tf | - | 60 | - | ns | VGS = 15 V, ID = 80 A, Rg = 3.3 惟 |
Instructions for Use:
Mounting and Handling:
- Handle the device with care to avoid mechanical stress.
- Ensure proper heat sinking to maintain junction temperature within safe limits.
Electrical Connections:
- Connect the gate to the control circuit using a low inductance path.
- Ensure the drain and source connections are secure and have low resistance.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Operate within the specified temperature range to ensure reliable performance.
Gate Drive:
- Use a gate resistor (Rg) to control switching speed and reduce electromagnetic interference (EMI).
- Ensure the gate voltage (VGS) is within the specified range to prevent damage.
Thermal Management:
- Use appropriate cooling methods such as heatsinks or forced air cooling to manage heat dissipation.
- Monitor the junction temperature to avoid thermal runaway.
Storage and Transportation:
- Store the device in a dry, cool place away from direct sunlight.
- Follow ESD (Electrostatic Discharge) precautions during handling and transportation.
Testing:
- Use a suitable test setup to verify the device parameters before installation.
- Refer to the datasheet for detailed testing procedures and conditions.
View more about IXFH80N65X2 on main site