IXFH80N65X2

IXFH80N65X2

Category: Transistors

Specifications
SKU
11301446
Details

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Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDSS - 650 - V
Gate-Source Voltage VGSS -15 - 15 V
Continuous Drain Current ID - 80 - A TC = 25掳C
Continuous Drain Current ID - 47 - A TC = 100掳C
Pulse Drain Current IDM - 240 - A TC = 25掳C, tp = 10 渭s, IGT = 10 A
Total Power Dissipation PTOT - 190 - W TC = 25掳C
Junction Temperature TJ - - 150 掳C
Storage Temperature Range TSTG -55 - 150 掳C
Gate Charge QG - 60 - nC VGS = 15 V, ID = 80 A
Input Capacitance Ciss - 2200 - pF VDS = 400 V, f = 1 MHz
Output Capacitance Coss - 330 - pF VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 110 - pF VDS = 400 V, f = 1 MHz
Threshold Voltage VGS(th) 2.5 4 5.5 V ID = 250 渭A, TA = 25掳C
On-State Resistance RDS(on) - 0.75 - VGS = 10 V, ID = 80 A, TA = 25掳C
Turn-On Delay Time td(on) - 35 - ns VGS = 15 V, ID = 80 A, Rg = 3.3 惟
Rise Time tr - 55 - ns VGS = 15 V, ID = 80 A, Rg = 3.3 惟
Turn-Off Delay Time td(off) - 25 - ns VGS = 15 V, ID = 80 A, Rg = 3.3 惟
Fall Time tf - 60 - ns VGS = 15 V, ID = 80 A, Rg = 3.3 惟

Instructions for Use:

  1. Mounting and Handling:

    • Handle the device with care to avoid mechanical stress.
    • Ensure proper heat sinking to maintain junction temperature within safe limits.
  2. Electrical Connections:

    • Connect the gate to the control circuit using a low inductance path.
    • Ensure the drain and source connections are secure and have low resistance.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the specified temperature range to ensure reliable performance.
  4. Gate Drive:

    • Use a gate resistor (Rg) to control switching speed and reduce electromagnetic interference (EMI).
    • Ensure the gate voltage (VGS) is within the specified range to prevent damage.
  5. Thermal Management:

    • Use appropriate cooling methods such as heatsinks or forced air cooling to manage heat dissipation.
    • Monitor the junction temperature to avoid thermal runaway.
  6. Storage and Transportation:

    • Store the device in a dry, cool place away from direct sunlight.
    • Follow ESD (Electrostatic Discharge) precautions during handling and transportation.
  7. Testing:

    • Use a suitable test setup to verify the device parameters before installation.
    • Refer to the datasheet for detailed testing procedures and conditions.
(For reference only)

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