Details

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BUY SI2323DS-T1-GE3 https://www.utsource.net/itm/p/11301454.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-55	-	55	V	Maximum drain-to-source voltage
Gate-Source Voltage	VGS	-8	-	8	V	Maximum gate-to-source voltage
Continuous Drain Current	ID	-	4.2	-	A	Continuous drain current at 25掳C
Pulse Drain Current	ID(PULSE)	-	16	-	A	Peak pulse drain current
Power Dissipation	PD	-	-	2.2	W	Maximum power dissipation
Junction Temperature	TJ	-55	-	150	掳C	Operating junction temperature range
Storage Temperature	TSTG	-65	-	150	掳C	Storage temperature range
Thermal Resistance	R胃JC	-	27	-	掳C/W	Junction to case thermal resistance
Gate Charge	QG	-	15	-	nC	Total gate charge
Input Capacitance	Ciss	-	900	-	pF	Input capacitance
Output Capacitance	Coss	-	250	-	pF	Output capacitance

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid static discharge (ESD) which can damage the MOSFET.
   • Use proper ESD protection equipment such as wrist straps and grounded work surfaces.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation to maintain junction temperature within safe limits.
   • Follow recommended soldering profiles to avoid thermal shock and ensure reliable connections.

3. Biasing:

   • Apply gate voltages within the specified range to prevent gate oxide damage.
   • Use appropriate gate drive circuits to minimize switching losses and ensure fast switching times.

4. Operation:

   • Monitor the junction temperature during operation to ensure it does not exceed the maximum rating.
   • Avoid exceeding the maximum continuous drain current to prevent overheating and potential failure.

5. Testing:

   • Use calibrated test equipment to measure parameters accurately.
   • Perform tests under controlled conditions to ensure consistent results.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against ESD and physical damage.

(For reference only)