Details

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BUY SI2305CDS-T1-GE3 https://www.utsource.net/itm/p/11301459.html

Parameter	Description	Value
Part Number	Part number of the device	SI2305CDS-T1-GE3
Type	Type of component	MOSFET
Package	Package type	SOT-23
VDS (Max)	Maximum Drain-to-Source Voltage	60 V
VGS (Max)	Maximum Gate-to-Source Voltage	卤20 V
ID (Max)	Maximum Drain Current	2.7 A (at VDS = 5.5V, Tj = 25掳C)
RDS(on)	On-State Resistance	0.85 惟 (at VGS = 4.5V, Tj = 25掳C)
Qg	Total Gate Charge	13 nC (at VDS = 10V, ID = 1A, VGS = 10V)
fT	Transition Frequency	240 MHz
Tj (Max)	Maximum Junction Temperature	150掳C
TA (Op)	Operating Ambient Temperature Range	-55掳C to 150掳C
Storage Temperature	Storage Temperature Range	-65掳C to 150掳C

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage to the leads and body.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure that the PCB layout and soldering process comply with industry standards.
   • Use a reflow soldering profile suitable for the SOT-23 package.

3. Biasing and Operation:

   • Ensure that the gate-to-source voltage (V_GS) does not exceed the maximum rating.
   • Operate within the specified temperature range to avoid thermal stress.

4. Testing:

   • Use a low-inductance test setup to minimize parasitic effects during testing.
   • Follow the recommended test conditions to ensure accurate measurements.

5. Storage:

   • Store in a dry, cool environment to prevent moisture damage.
   • Use desiccant packets if long-term storage is required.

6. Environmental Considerations:

   • Dispose of the device in accordance with local environmental regulations.
   • The device is RoHS compliant and lead-free.

(For reference only)