K2382

K2382

Category: Transistors

Specifications
SKU
11303364
Details

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Parameter Description Value
Part Number K2382
Type Bipolar Transistor NPN
Collector-Emitter Voltage (Vce) Maximum Collector-Emitter Voltage 450 V
Collector-Base Voltage (Vcb) Maximum Collector-Base Voltage 500 V
Emitter-Base Voltage (Veb) Maximum Emitter-Base Voltage 5 V
Collector Current (Ic) Continuous Collector Current 15 A
Power Dissipation (Ptot) Total Power Dissipation 150 W
Operating Temperature Range (Tj) Junction Temperature Range -55掳C to +150掳C
Storage Temperature Range (Tstg) Storage Temperature Range -65掳C to +150掳C
Transition Frequency (ft) Transition Frequency 1 MHz
DC Current Gain (hFE) DC Current Gain 10 to 100
Package Type Package Type TO-220

Instructions for Use:

  1. Handling Precautions:

    • Handle the K2382 with care to avoid damage to the leads and body.
    • Use appropriate ESD protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within the specified range.
    • Use thermal compound between the transistor and the heat sink for better thermal conductivity.
  3. Biasing:

    • Ensure that the base-emitter voltage (Vbe) is within the specified limits to avoid damage.
    • Use appropriate biasing circuits to ensure stable operation.
  4. Overvoltage Protection:

    • Protect the transistor from overvoltage conditions by using clamping diodes or other protective circuits.
  5. Current Limiting:

    • Use current-limiting resistors to prevent excessive collector current, which can lead to overheating and damage.
  6. Testing:

    • Test the transistor under controlled conditions to verify its performance and ensure it meets the required specifications.
  7. Storage:

    • Store the K2382 in a dry, cool place away from direct sunlight and extreme temperatures.
  8. Soldering:

    • Use a soldering iron with a temperature setting suitable for the TO-220 package.
    • Avoid excessive heat and prolonged soldering times to prevent damage to the transistor.
(For reference only)

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