Details

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BUY MDF10N60G https://www.utsource.net/itm/p/11303493.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-	600	-	V	Maximum voltage that can be applied between the drain and source terminals with the gate open.
Gate-Source Voltage	VGS	-20	-	20	V	Maximum voltage that can be applied between the gate and source terminals.
Continuous Drain Current	ID	-	10	-	A	Maximum continuous current that can flow through the drain terminal at a case temperature of 25掳C.
Pulse Drain Current	IDpeak	-	30	-	A	Maximum peak current that can flow through the drain terminal for a short duration (typically 10 渭s).
Power Dissipation	PTOT	-	125	-	W	Maximum power dissipation at a case temperature of 25掳C.
Junction Temperature	TJ	-	-	175	掳C	Maximum operating temperature of the semiconductor junction.
Storage Temperature Range	TSTG	-55	-	150	掳C	Temperature range over which the device can be stored without damage.
Thermal Resistance, Junction to Case	R胃JC	-	0.5	-	掳C/W	Thermal resistance from the junction to the case.
Input Capacitance	Ciss	-	1800	-	pF	Capacitance between the gate and source terminals with the drain shorted to the source.
Output Capacitance	Coss	-	220	-	pF	Capacitance between the drain and source terminals with the gate shorted to the source.
Reverse Transfer Capacitance	Crss	-	450	-	pF	Capacitance between the drain and gate terminals with the source grounded.
Turn-On Delay Time	td(on)	-	10	-	ns	Time delay from the start of the gate drive pulse to the point where the drain current reaches 10% of its final value.
Rise Time	tr	-	25	-	ns	Time required for the drain current to rise from 10% to 90% of its final value.
Turn-Off Delay Time	td(off)	-	15	-	ns	Time delay from the removal of the gate drive pulse to the point where the drain current falls to 90% of its initial value.
Fall Time	tf	-	20	-	ns	Time required for the drain current to fall from 90% to 10% of its initial value.

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within safe limits.
   • Handle the device with care to avoid static discharge, which can damage the MOSFET.

2. Biasing and Drive:

   • Apply the appropriate gate-source voltage (V_GS) to turn the MOSFET on or off. The typical threshold voltage (V_th) is around 4V, but this can vary.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

3. Current and Voltage Limits:

   • Do not exceed the maximum drain-source voltage (V_DS) or the continuous drain current (I_D).
   • For pulse applications, ensure the pulse drain current (I_Dpeak) does not exceed the specified limit.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to prevent overheating. Use adequate cooling solutions like heatsinks or fans if necessary.
   • Consider the thermal resistance (R_胃JC) when designing the cooling system.

5. Storage and Operating Conditions:

   • Store the device within the specified storage temperature range (T_STG) to avoid damage.
   • Operate the device within the specified operating temperature range to ensure reliable performance.

6. Capacitance and Switching:

   • Account for the input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) in your circuit design to optimize performance.
   • Use the switching times (t_d(on), t_r, t_d(off), t_f) to design efficient switching circuits and minimize losses.

By following these parameters and instructions, you can ensure the MDF10N60G operates reliably and efficiently in your application.

(For reference only)