BFG520

BFG520

Category: Transistors

Specifications
Details

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Parameter Value Unit
Type NPN Bipolar -
Collector-Emitter Voltage (VCEO) 200 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 15 A
Power Dissipation (Ptot) 120 W
Transition Frequency (fT) 300 MHz
Operating Temperature Range -55 to 150 °C

Instructions for BFG520:

  1. Mounting: Ensure the device is mounted on a heatsink if operating at high currents or power levels to maintain junction temperature within safe limits.
  2. Biasing: Use appropriate biasing circuits to ensure stable operation and prevent thermal runaway.
  3. Protection: Incorporate protective diodes and capacitors as necessary, especially in switching applications to protect against voltage spikes.
  4. Handling: Handle with care to avoid damage to leads and body; use anti-static precautions to prevent damage from ESD (Electrostatic Discharge).
  5. Testing: Test the device under controlled conditions before deploying in final applications to ensure it meets all performance requirements.
(For reference only)

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