HSMS-2810-TR1G

HSMS-2810-TR1G

Category: Transistors

Specifications
SKU
11304137
Details

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Parameter Value Unit
Device Type Schottky Barrier Diode -
Maximum Reverse Voltage (VR) 30 V
Maximum Forward Current (IF) 1.0 A
Peak Forward Surge Current (IFSM) 50 A
Forward Voltage (VF) at IF = 1.0A 0.35 V
Reverse Current (IR) at VR = 30V 1.0 渭A
Operating Temperature Range (TJ) -65 to +175 掳C
Storage Temperature Range (TS) -65 to +175 掳C
Package Type SOD-323 (SC-74) -
Lead Finish Tin (Sn) -

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid mechanical damage.
    • Use ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure proper alignment of the device during mounting.
    • Apply appropriate soldering temperature and time to avoid thermal damage.
  3. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Follow the recommended storage temperature range to ensure long-term reliability.
  4. Application:

    • Use within the specified operating temperature range to prevent performance degradation or failure.
    • Ensure the reverse voltage does not exceed the maximum rating to avoid breakdown.
  5. Testing:

    • Use appropriate test equipment and methods to verify the device parameters.
    • Follow standard testing procedures to ensure accurate measurements.
  6. Soldering:

    • Preheat the PCB to reduce thermal shock.
    • Use a controlled soldering profile to avoid excessive heat exposure.
  7. Environmental Considerations:

    • The device is RoHS compliant and lead-free.
    • Dispose of the device according to local environmental regulations.
(For reference only)

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