Details

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BUY FGH80N60FD https://www.utsource.net/itm/p/11526098.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	600	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Drain Current	ID	-	80	-	A	@ TC = 25掳C
Pulse Drain Current	IDM	-	160	-	A	tp = 10 渭s, IG = 10 A
Power Dissipation	PTOT	-	-	180	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • ESD Sensitivity: The FGH80N60FD is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
   • Moisture Sensitivity: Store the device in a dry environment to prevent moisture damage.

2. Mounting:

   • Thermal Management: Ensure adequate heat sinking to maintain the junction temperature within the specified limits. The thermal resistance (R_th(j-c)) should be considered in the design.
   • Mechanical Stress: Avoid applying excessive mechanical stress to the leads during soldering or mounting. Follow recommended soldering profiles to prevent damage.

3. Electrical Characteristics:

   • Gate Drive: Use a gate drive circuit that provides sufficient current to charge and discharge the gate capacitance quickly. Typical gate resistor values range from 10 惟 to 100 惟.
   • Safe Operating Area (SOA): Refer to the SOA graph in the datasheet to ensure the device operates within safe limits under all conditions.

4. Testing:

   • Initial Testing: Perform initial testing at room temperature to verify basic functionality before moving to more rigorous tests.
   • Thermal Testing: Conduct thermal tests to ensure the device can handle the maximum power dissipation and temperature conditions.

5. Storage:

   • Long-Term Storage: If storing the device for extended periods, use anti-static packaging and keep in a controlled environment to prevent degradation.

For detailed information and specific application notes, refer to the datasheet provided by the manufacturer.

(For reference only)