Details

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BUY IRLB4132 https://www.utsource.net/itm/p/11526508.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-Resistance	RDS(on)	VGS = 4.5V, ID = 20A	-	1.6	-	mΩ
Gate Charge	Qg	VDS = 10V, VGS = 4.5V to 0V	-	8.9	-	nC
Input Capacitance	Ciss	VDS = 10V, f = 1MHz	-	1350	-	pF
Output Capacitance	Coss	VDS = 10V, f = 1MHz	-	220	-	pF
Total Gate Charge	Qg	VDS = 10V, IDS = 20A	-	8.9	-	nC
Threshold Voltage	VGS(th)	ID = 250μA	1.0	1.2	1.4	V
Continuous Drain Current	ID	TC = 25°C	-	41	-	A
Power Dissipation	PD	TC = 25°C	-	77	-	W
Junction Temperature	Tj	-	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Handle the IRLB4132 with care to avoid damage to the leads and body.
   • Ensure proper mounting on a heat sink if operating at high power levels.

2. Operating Conditions:

   • Operate within specified temperature ranges to ensure reliability.
   • Do not exceed maximum ratings for drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID).

3. Biasing and Driving:

   • Apply appropriate gate drive voltages to minimize on-resistance and switching losses.
   • Ensure that the gate drive circuitry can supply sufficient current to charge and discharge the gate capacitance quickly.

4. Thermal Considerations:

   • Monitor junction temperature during operation.
   • Use thermal management techniques such as heatsinks or forced air cooling if necessary.

5. Storage and Transportation:

   • Store in a dry environment to prevent moisture damage.
   • Follow ESD (Electrostatic Discharge) precautions when handling to avoid damage to the device.

6. Testing:

   • Verify all connections are secure before applying power.
   • Test under controlled conditions to validate performance parameters.

(For reference only)