Details

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BUY IRF740 NEW ORIGINAL https://www.utsource.net/itm/p/11530751.html

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Drain-Source Voltage	VDSS	-	-	400	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Drain Current	ID	-	7.6	-	A	TC = 25°C
Pulse Drain Current	Ibm	-	39	-	A	tp = 10ms, TC = 25°C
Input Capacitance	Ciss	-	1600	-	pF	VDS = 25V, VGS = 0V
Output Capacitance	Coss	-	380	-	pF	VDS = 25V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	470	-	pF	VDS = 25V, VGS = 0V
Gate Charge	Qg	-	58	-	nC	VGS = 10V
Total Power Dissipation	PD	-	41	-	W	TC = 25°C
Junction Temperature	Tj	-55	-	150	°C
Storage Temperature	Tstg	-55	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • Ensure proper ESD protection when handling the IRF740 to prevent damage from static electricity.

2. Mounting:

   • Mount the device on a heatsink if operating at high power levels to maintain junction temperature within specified limits.

3. Biasing:

   • Apply gate voltage carefully not to exceed the maximum ratings of VGS. The typical operating range is between -15V and +20V.

4. Operation:

   • Ensure that the drain-source voltage (VDSS) does not exceed 400V to avoid breakdown.
   • Limit continuous drain current (ID) to 7.6A at 25°C case temperature. For higher temperatures or pulse conditions, refer to the pulse drain current (Ibm).

5. Storage:

   • Store in a dry environment within the storage temperature range (-55°C to 150°C).

6. Capacitance Considerations:

   • Be aware of the input (Ciss), output (Coss), and reverse transfer capacitances (Crss) which can affect switching performance.

7. Power Dissipation:

   • Keep total power dissipation (PD) within safe limits by ensuring adequate heat sinking or cooling measures.

8. Temperature Management:

   • Monitor junction temperature (Tj) to ensure it stays within operational limits (-55°C to 150°C).

(For reference only)