Details

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BUY IRFB5620PBF https://www.utsource.net/itm/p/11530834.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	-55	-	55	V
Gate-Source Voltage	VGS	-12	-	12	V
Continuous Drain Current	ID	-	42	84	A
Pulse Drain Current	IDpeak	-	120	-	A
Power Dissipation	PTOT	-	-	160	W
Junction Temperature	TJ	-55	-	175	掳C
Storage Temperature	TSTG	-55	-	175	掳C
Thermal Resistance, J-C	R胃JC	-	0.35	-	掳C/W

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid static discharge, which can damage the device.

2. Mounting:

   • Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within safe limits.
   • Use recommended torque values for screw terminals to ensure good electrical and thermal contact.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use short leads to minimize inductance and parasitic effects.

4. Biasing:

   • Apply gate-source voltage (V_GS) within the specified range to avoid damaging the gate oxide.
   • Ensure that the gate is properly driven to achieve the desired on-state and off-state conditions.

5. Operation:

   • Monitor the drain current (I_D) and power dissipation (P_TOT) to ensure they do not exceed the maximum ratings.
   • Keep the junction temperature (T_J) below the maximum rating to prevent thermal runaway and device failure.

6. Testing:

   • Perform initial testing at low power levels to verify correct operation and connections.
   • Use appropriate test equipment to measure and monitor key parameters such as V_DS, I_D, and T_J.

7. Safety:

   • Follow all safety guidelines when handling high voltages and currents.
   • Use protective equipment and follow proper grounding procedures.

By adhering to these guidelines, you can ensure reliable and efficient operation of the IRFB5620PBF MOSFET.

(For reference only)