Details

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BUY 2SC5353 https://www.utsource.net/itm/p/11530885.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	-	80	V
Collector-Base Voltage	VCB	-	-	80	V
Emitter-Base Voltage (Reverse)	VEBO	-	-	5	V
Collector Current (Continuous)	IC	-	1.5	3	A
Collector Current (Pulse)	IC(P)	-	6	-	A
Base Current (Continuous)	IB	-	0.15	0.3	A
Power Dissipation	PT	-	45	65	W
Junction Temperature	TJ	-20	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation, especially when operating at higher currents or temperatures.
   • Use a suitable thermal compound between the transistor and the heat sink to improve thermal conductivity.

2. Biasing:

   • The base-emitter voltage (V_BE) is typically around 0.7V for this transistor. Ensure that the base current (I_B) is sufficient to drive the collector current (I_C) as required.
   • For linear applications, use a biasing network to maintain the transistor in the active region.

3. Protection:

   • Use a series resistor with the base to limit the base current and protect the transistor from excessive current.
   • Consider using a flyback diode across inductive loads to protect against voltage spikes.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table to avoid damage to the transistor.
   • Monitor the junction temperature (T_J) to ensure it remains within safe limits, especially during continuous operation.

5. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
   • Handle with care to avoid mechanical damage and static discharge.

6. Testing:

   • Before installing the transistor in a circuit, test it using a multimeter or a transistor tester to ensure it is functioning correctly.
   • Check for short circuits and open circuits between the terminals.

By following these instructions, you can ensure reliable and efficient operation of the 2SC5353 transistor.

(For reference only)