Details

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BUY IRF3710S https://www.utsource.net/itm/p/11531213.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	60	-	V	Continuous
Gate-Source Voltage	VGS	-20	-	20	V	Continuous
Continuous Drain Current	ID	-	4.2	-	A	TC = 25掳C, VGS = 10V
Pulse Drain Current	IDpeak	-	20	-	A	tp = 10ms, IG = 2A, TC = 25掳C
Power Dissipation	PD	-	115	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	Continuous
Storage Temperature Range	TSTG	-55	-	150	掳C	-
Thermal Resistance, Junction to Case	R胃JC	-	1.2	-	掳C/W	-
Input Capacitance	Ciss	-	1800	-	pF	VDS = 25V, f = 1MHz
Output Capacitance	Coss	-	400	-	pF	VDS = 25V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	300	-	pF	VDS = 25V, f = 1MHz
Gate Charge	QG	-	60	-	nC	VGS = 10V, VDS = 25V, ID = 4.2A
Threshold Voltage	VGS(th)	2	4	6	V	ID = 250渭A, TA = 25掳C
On-State Resistance	RDS(on)	-	0.065	-	惟	VGS = 10V, ID = 4.2A, TA = 25掳C

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Handle the device with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation, especially when operating at high currents or in high ambient temperatures.
   • Use a thermal compound between the device and the heat sink to improve thermal conductivity.

3. Electrical Connections:

   • Connect the gate to the control circuitry using short leads to minimize parasitic inductance.
   • Ensure that the source is properly grounded to prevent unwanted voltage spikes.

4. Operating Conditions:

   • Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, and continuous drain current.
   • Monitor the junction temperature to ensure it does not exceed 175掳C.

5. Testing:

   • Use a constant current source when testing the on-state resistance to avoid overheating.
   • Measure the threshold voltage at room temperature to ensure the device is functioning correctly.

6. Protection:

   • Consider adding overvoltage protection (e.g., TVS diodes) to protect against transient voltage spikes.
   • Use a gate resistor to limit the gate current and prevent oscillations during switching.

By following these guidelines, you can ensure reliable and efficient operation of the IRF3710S MOSFET.

(For reference only)