Details

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BUY FGW75N60HD 75G60HD 600V75A TO-247 IGBT https://www.utsource.net/itm/p/11531275.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE(off)	-	-	600	V	-
Collector Current	IC	-	75	-	A	@ Tj = 25掳C
Collector Current	IC	-	50	-	A	@ Tj = 100掳C
Emitter-Base Voltage	VEB(off)	-	-	5	V	-
Gate-Emitter Voltage	VGE(th)	12	15	18	V	@ IC = 1 A
Turn-On Time	ton	-	0.3	-	渭s	@ IC = 50 A, VGE = 15 V
Turn-Off Time	toff	-	0.4	-	渭s	@ IC = 50 A, VGE = -15 V
Storage Temperature Range	Tstg	-55	-	150	掳C	-
Operating Junction Temperature	Tj(op)	-	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the device to high temperatures, humidity, or mechanical stress.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper thermal management by using a heatsink if necessary.
   • Apply a suitable thermal interface material between the device and the heatsink for optimal heat dissipation.

3. Biasing:

   • Ensure that the gate-emitter voltage (V_GE) is within the specified limits to avoid damage to the device.
   • Use a gate resistor to control the switching speed and reduce switching losses.

4. Operating Conditions:

   • Do not exceed the maximum collector current (I_C) and collector-emitter voltage (V_CE(off)).
   • Monitor the junction temperature (T_j) to ensure it stays within the operating range.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and corrosive substances.

6. Testing:

   • Use appropriate test equipment and follow safety guidelines to avoid damage to the device and injury to personnel.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)