Details

---

BUY IRF2807STRPBF IRF2807S TO-263 https://www.utsource.net/itm/p/11531573.html

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source Voltage	VDS	-	-	55	-	V
Gate-Source Voltage	VGS	-	-	卤20	-	V
Continuous Drain Current (TC = 25掳C)	ID(25掳C)	-	-	40	-	A
Continuous Drain Current (TC = 100掳C)	ID(100掳C)	-	-	25	-	A
Pulse Drain Current (tp = 10 ms, duty cycle = 1%)	IDpeak	-	-	100	-	A
Gate Charge	QG	VGS = 10V, ID = 40A	-	100	-	nC
Input Capacitance	Ciss	VDS = 25V, f = 1 MHz	-	3500	-	pF
Output Capacitance	Coss	VDS = 25V, f = 1 MHz	-	110	-	pF
Reverse Transfer Capacitance	Crss	VDS = 25V, VGS = 0V, f = 1 MHz	-	300	-	pF
On-State Resistance (VGS = 10V)	RDS(on)	ID = 40A, TC = 25掳C	-	3.5	-	m惟
On-State Resistance (VGS = 10V)	RDS(on)	ID = 40A, TC = 100掳C	-	5.5	-	m惟
Gate-Source Threshold Voltage	VGS(th)	ID = 250 渭A, TA = 25掳C	2.0	-	4.0	V
Total Power Dissipation (TC = 25掳C)	PTOT	-	-	150	-	W
Junction to Ambient Thermal Resistance	R胃JA	-	-	62	-	掳C/W
Junction to Case Thermal Resistance	R胃JC	-	-	0.5	-	掳C/W
Storage Temperature Range	Tstg	-	-65	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The IRF2807S is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
   • Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.

2. Mounting:

   • Ensure good thermal management by using a heatsink if necessary, especially when operating at high currents or power levels.
   • Use a thermal interface material (TIM) between the device and the heatsink to improve heat dissipation.

3. Biasing:

   • Apply the gate-source voltage (V_GS) carefully to ensure it stays within the recommended range to avoid damaging the gate.
   • For optimal performance, use a gate driver circuit that can provide the required gate current quickly to minimize switching losses.

4. Operation:

   • Operate the device within the specified temperature range to ensure reliable performance and longevity.
   • Monitor the junction temperature (T_J) to avoid overheating, which can lead to reduced lifespan and potential failure.

5. Testing:

   • When testing the device, use the specified test conditions to accurately measure parameters such as on-state resistance (R_DS(on)) and gate charge (Q_G).

6. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage and degradation over time.

By following these guidelines, you can ensure the reliable and efficient operation of the IRF2807S TO-263 transistor.

(For reference only)