Details

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BUY FQD13N06TM https://www.utsource.net/itm/p/11532517.html

Parameter	Symbol	Min	Typical	Max	Unit
Drain-Source Voltage	VDS	-	60	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current (TC = 25掳C)	ID	-	13	-	A
Continuous Drain Current (TC = 75掳C)	ID	-	9.1	-	A
Pulse Drain Current (tp = 10 ms, TC = 25掳C)	IDpeak	-	40	-	A
Power Dissipation (TC = 25掳C)	PTOT	-	88	-	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Total Gate Charge	QG	-	33	-	nC
Input Capacitance	Ciss	-	1200	-	pF
Output Capacitance	Coss	-	220	-	pF
Reverse Transfer Capacitance	Crss	-	65	-	pF
Drain-Source On-State Resistance (VGS = 10V, ID = 13A)	RDS(on)	-	0.045	-	惟
Gate-Source Threshold Voltage	VGS(th)	2.0	2.5	3.0	V

Instructions for Use:

1. Operating Conditions:

   • Ensure that the drain-source voltage (V_DS) does not exceed 60V.
   • The gate-source voltage (V_GS) should be within the range of -20V to 20V.
   • The continuous drain current (I_D) should not exceed 13A at 25掳C or 9.1A at 75掳C.
   • For pulse conditions, the peak drain current (I_Dpeak) can reach up to 40A for a 10ms pulse at 25掳C.

2. Thermal Management:

   • The junction temperature (T_J) should not exceed 150掳C.
   • The power dissipation (P_TOT) should be managed to ensure the device operates within safe limits, especially at higher temperatures.

3. Capacitance Considerations:

   • The input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) affect the switching performance. Design the circuit to minimize parasitic inductances and ensure stable operation.

4. Gate Drive:

   • The gate-source threshold voltage (V_GS(th)) is between 2.0V and 3.0V. Ensure the gate drive circuit provides sufficient voltage to fully turn on the MOSFET.
   • The total gate charge (Q_G) is 33nC, which affects the switching speed and power consumption. Use appropriate gate resistors to control the switching time.

5. Storage and Handling:

   • Store the device in a dry environment within the storage temperature range of -55掳C to 150掳C.
   • Handle with care to avoid damage from electrostatic discharge (ESD). Use ESD protection measures when handling the device.

6. Mounting and PCB Layout:

   • Ensure proper thermal management by using a heatsink if necessary.
   • Design the PCB layout to minimize parasitic inductances and ensure good thermal conductivity from the MOSFET to the heatsink.

By following these guidelines, you can ensure reliable and efficient operation of the FQD13N06TM MOSFET.

(For reference only)