Details

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BUY FZT790ATA https://www.utsource.net/itm/p/11532988.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	30	-	V
Emitter-Base Voltage	VEB	-	5	-	V
Collector Current	IC	-	100	-	mA
Base Current	IB	-	10	-	mA
Power Dissipation	PT	-	350	-	mW
Junction Temperature	TJ	-40	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Transition Frequency	fT	-	300	-	MHz

Instructions for Using FZT790ATA:

1. Handling Precautions:

   • Avoid excessive mechanical stress on the leads.
   • Use proper anti-static precautions to prevent damage from electrostatic discharge (ESD).

2. Mounting:

   • Ensure the device is mounted on a suitable heat sink if operating at high power levels.
   • Soldering temperature should not exceed 260掳C, and soldering time should be kept under 10 seconds.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Ensure that the junction temperature does not exceed 150掳C during operation.

4. Biasing:

   • For optimal performance, bias the base current (I_B) appropriately to achieve the desired collector current (I_C).
   • Use a current-limiting resistor in series with the base to prevent excessive base current.

5. Testing:

   • When testing the device, use a constant current source to avoid damaging the transistor.
   • Measure the collector-emitter voltage (V_CE) and collector current (I_C) to verify proper operation.

6. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use.

7. Troubleshooting:

   • If the device fails to operate correctly, check for proper biasing, correct connections, and ensure that all components are within their specified limits.
   • Use a multimeter to check for continuity and resistance values to diagnose potential issues.

By following these instructions, you can ensure reliable and efficient operation of the FZT790ATA transistor.

(For reference only)