Details

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BUY NGTB40N120SWG NGTB40N120 40A1200V ON https://www.utsource.net/itm/p/11533716.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-	-	1200	V	Maximum voltage between drain and source with gate open
Continuous Drain Current	ID	-	40	-	A	Maximum continuous current through the drain
Gate-Source Voltage	VGS	-20	-	20	V	Maximum voltage between gate and source
Gate Charge	QG	-	185	-	nC	Total gate charge
Input Capacitance	Ciss	-	3900	-	pF	Input capacitance at VDS = 600V, VGS = 0V
Output Capacitance	Coss	-	135	-	pF	Output capacitance at VDS = 600V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	170	-	pF	Reverse transfer capacitance at VDS = 600V, VGS = 0V
On-State Resistance	RDS(on)	-	0.12	-	惟	On-state resistance at VGS = 15V, ID = 40A
Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	Gate-source threshold voltage
Power Dissipation	PTOT	-	-	350	W	Maximum total power dissipation
Junction Temperature	TJ	-	-	175	掳C	Maximum junction temperature
Storage Temperature	TSTG	-55	-	150	掳C	Operating temperature range

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified operating range.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper thermal management to keep the junction temperature within the specified limits.
   • Use a heatsink or cooling solution if necessary.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified range to avoid damage.
   • Ensure that the gate drive circuitry can provide the required gate charge (Q_G).

4. Operation:

   • Do not exceed the maximum drain-source voltage (V_DS) or continuous drain current (I_D).
   • Monitor the power dissipation (P_TOT) to ensure it remains within safe limits.

5. Testing:

   • Use the specified test conditions for accurate measurements of parameters such as on-state resistance (R_DS(on)) and threshold voltage (V_GS(th)).

6. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Follow recommended storage practices to maintain device integrity.

(For reference only)