Details

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BUY MJ15024G MJ15025G A PAIR https://www.utsource.net/itm/p/11533750.html

Parameter	MJ15024G (NPN)	MJ15025G (PNP)
Type	NPN Power Transistor	PNP Power Transistor
Collector-Emitter Voltage (Vceo)	80 V	80 V
Emitter-Collector Voltage (Vceo)	-	80 V
Collector-Base Voltage (Vcbo)	80 V	80 V
Emitter-Base Voltage (Vebo)	6 V	6 V
Continuous Collector Current (Ic)	15 A	15 A
Peak Collector Current (Icm)	30 A	30 A
Power Dissipation (Ptot)	125 W	125 W
Storage Temperature (Tstg)	-55掳C to +150掳C	-55掳C to +150掳C
Operating Junction Temperature (Tj)	-55掳C to +150掳C	-55掳C to +150掳C
Case Style	TO-3P	TO-3P

Instructions for Use:

1. Mounting:

   • Ensure that the transistors are securely mounted to a heat sink to dissipate heat effectively.
   • Use thermal compound between the transistor and the heat sink to improve thermal conductivity.

2. Biasing:

   • For the NPN (MJ15024G), apply a positive base-emitter voltage (Vbe) to turn the transistor on.
   • For the PNP (MJ15025G), apply a negative base-emitter voltage (Vbe) to turn the transistor on.

3. Current Limiting:

   • Use appropriate current-limiting resistors in the base circuit to prevent excessive base current, which can damage the transistors.

4. Protection:

   • Consider using diodes (e.g., flyback diodes) to protect the transistors from inductive spikes in circuits with inductive loads.

5. Storage:

   • Store the transistors in a dry, cool place away from direct sunlight and extreme temperatures.

6. Handling:

   • Handle the transistors with care to avoid mechanical damage or static discharge, which can damage the devices.

7. Testing:

   • Before installing the transistors in a circuit, test them using a multimeter or transistor tester to ensure they are functioning correctly.

By following these instructions, you can ensure optimal performance and longevity of the MJ15024G and MJ15025G transistors.

(For reference only)