Details

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BUY 2SJ317 https://www.utsource.net/itm/p/11533968.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Collector-Emitter Voltage	VCE	-	-	800	V
Emitter-Base Voltage	VEB	-	-	5	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	1	A
Power Dissipation	PT	-	-	180	W	Case temperature TC = 25掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Operating Junction Temperature	TJ	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SJ317 with care to avoid mechanical damage.
   • Ensure proper heat sinking to manage power dissipation, especially when operating at high currents.

2. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly.
   • Use appropriate wire gauges to handle the rated current without excessive resistance.

3. Biasing:

   • Apply the correct biasing conditions to ensure the transistor operates in the desired region (cut-off, active, or saturation).
   • Ensure the base-emitter voltage (V_EB) does not exceed the maximum rating.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to prevent overheating.
   • Use thermal compounds to improve heat transfer from the transistor to the heat sink.

5. Protection:

   • Consider using overvoltage protection (e.g., TVS diodes) to protect against transient voltages.
   • Implement current limiting circuits to prevent exceeding the maximum collector current (I_C).

6. Storage:

   • Store the 2SJ317 in a dry, cool place within the specified storage temperature range.
   • Avoid exposure to static electricity, which can damage the device.

7. Testing:

   • Test the transistor under controlled conditions to verify its performance before integrating it into the final application.
   • Use a multimeter or a dedicated transistor tester to check for continuity and correct operation.

By following these guidelines, you can ensure reliable and efficient operation of the 2SJ317 transistor.

(For reference only)