HGTG12N60A4D

HGTG12N60A4D

Category: Transistors

Specifications
SKU
11535010
Details

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Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - 600 - V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 12 - A TC = 25掳C
Pulse Drain Current ID(pulse) - 36 - A tp = 10 渭s, IG = 10 A
Power Dissipation PTOT - 288 - W TC = 25掳C
Junction Temperature TJ - - 175 掳C
Storage Temperature Range TSTG -55 - 150 掳C
Thermal Resistance, Junction to Case Rth(j-c) - 0.65 - K/W
Total Gate Charge QG - 120 - nC VGS = 15 V, ID = 12 A
Input Capacitance Ciss - 2200 - pF VDS = 400 V, f = 1 MHz
Output Capacitance Coss - 140 - pF VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 300 - pF VDS = 400 V, f = 1 MHz

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is mounted on a heatsink with adequate thermal conductivity to maintain the junction temperature within safe limits.
    • Handle the device with care to avoid damage to the leads and the die.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use short and thick wires to minimize parasitic inductance and resistance.
  3. Gate Drive:

    • Apply a gate-source voltage (VGS) between -20 V and +20 V.
    • Ensure the gate drive circuit has sufficient current capability to charge and discharge the gate capacitance quickly.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 175掳C.
    • Use a thermal interface material (TIM) between the device and the heatsink to improve heat dissipation.
  5. Overcurrent Protection:

    • Implement overcurrent protection to prevent damage from excessive drain current.
    • Use a fast-acting fuse or a current-limiting circuit.
  6. Storage and Operating Environment:

    • Store the device in a dry environment to prevent moisture damage.
    • Operate the device within the specified storage temperature range (-55掳C to 150掳C).
  7. Pulse Operation:

    • For pulse operation, ensure that the pulse duration (tp) and peak current (ID(pulse)) do not exceed the specified limits.
    • Verify that the total energy dissipated during the pulse does not exceed the maximum allowable power dissipation.
  8. Testing and Verification:

    • Test the device under actual operating conditions to ensure it meets the required performance specifications.
    • Perform regular maintenance and inspection to identify any potential issues early.
(For reference only)

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