Details
BUY HGTG12N60A4D https://www.utsource.net/itm/p/11535010.html
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 600 | - | V | |
Gate-Source Voltage | VGS | -20 | - | 20 | V | |
Continuous Drain Current | ID | - | 12 | - | A | TC = 25掳C |
Pulse Drain Current | ID(pulse) | - | 36 | - | A | tp = 10 渭s, IG = 10 A |
Power Dissipation | PTOT | - | 288 | - | W | TC = 25掳C |
Junction Temperature | TJ | - | - | 175 | 掳C | |
Storage Temperature Range | TSTG | -55 | - | 150 | 掳C | |
Thermal Resistance, Junction to Case | Rth(j-c) | - | 0.65 | - | K/W | |
Total Gate Charge | QG | - | 120 | - | nC | VGS = 15 V, ID = 12 A |
Input Capacitance | Ciss | - | 2200 | - | pF | VDS = 400 V, f = 1 MHz |
Output Capacitance | Coss | - | 140 | - | pF | VDS = 400 V, f = 1 MHz |
Reverse Transfer Capacitance | Crss | - | 300 | - | pF | VDS = 400 V, f = 1 MHz |
Instructions for Use:
Mounting and Handling:
- Ensure that the device is mounted on a heatsink with adequate thermal conductivity to maintain the junction temperature within safe limits.
- Handle the device with care to avoid damage to the leads and the die.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short and thick wires to minimize parasitic inductance and resistance.
Gate Drive:
- Apply a gate-source voltage (VGS) between -20 V and +20 V.
- Ensure the gate drive circuit has sufficient current capability to charge and discharge the gate capacitance quickly.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 175掳C.
- Use a thermal interface material (TIM) between the device and the heatsink to improve heat dissipation.
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive drain current.
- Use a fast-acting fuse or a current-limiting circuit.
Storage and Operating Environment:
- Store the device in a dry environment to prevent moisture damage.
- Operate the device within the specified storage temperature range (-55掳C to 150掳C).
Pulse Operation:
- For pulse operation, ensure that the pulse duration (tp) and peak current (ID(pulse)) do not exceed the specified limits.
- Verify that the total energy dissipated during the pulse does not exceed the maximum allowable power dissipation.
Testing and Verification:
- Test the device under actual operating conditions to ensure it meets the required performance specifications.
- Perform regular maintenance and inspection to identify any potential issues early.
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