Details

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BUY IRFP450LCPBF https://www.utsource.net/itm/p/11535806.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	500	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	10	-	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	30	-	A	tp = 10 ms, IG = 10 A
Power Dissipation	PT	-	-	160	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance	R胃JC	-	0.8	-	掳C/W	Junction to Case
Input Capacitance	Ciss	-	2200	-	pF	VDS = 25 V, f = 1 MHz
Output Capacitance	Coss	-	110	-	pF	VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	120	-	pF	VDS = 25 V, f = 1 MHz
Turn-On Delay Time	td(on)	-	150	-	ns	ID = 10 A, VGS = 15 V, VDS = 250 V
Rise Time	tr	-	90	-	ns	ID = 10 A, VGS = 15 V, VDS = 250 V
Turn-Off Delay Time	td(off)	-	100	-	ns	ID = 10 A, VGS = 15 V, VDS = 250 V
Fall Time	tf	-	120	-	ns	ID = 10 A, VGS = 15 V, VDS = 250 V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage power dissipation.
   • Handle with care to avoid damage to the leads and the die.

2. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified range to avoid gate oxide breakdown.
   • Ensure the drain-source voltage (V_DS) does not exceed the maximum rating to prevent device failure.

3. Current Limiting:

   • Do not exceed the continuous drain current (I_D) or pulse drain current (I_D(p)) ratings.
   • Use appropriate current limiting resistors if necessary.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it remains below the maximum rating.
   • Use thermal paste and heatsinks to improve heat dissipation.

5. Storage:

   • Store the device in a dry, cool place within the storage temperature range (T_STG).

6. Testing:

   • Test the device under controlled conditions to verify performance parameters.
   • Use appropriate test equipment and methods to avoid damaging the device.

7. ESD Protection:

   • Handle the device with ESD protection measures to prevent electrostatic discharge damage.

8. Soldering:

   • Follow recommended soldering profiles to avoid thermal shock and damage to the device.

(For reference only)