Details

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BUY 2SK2730 https://www.utsource.net/itm/p/11545233.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)	-	-	150	V
Gate-Source Voltage	V(GS)	-10	-	10	V
Drain Current	I(D)	-	4	8	A
Gate Threshold Voltage	V(GSth)	1.5	2.5	3.5	V
Transconductance	gfs	15	-	30	S
Input Capacitance	Ciss	-	350	-	pF
Output Capacitance	Coss	-	100	-	pF
Reverse Transfer Capacit.	Crss	-	20	-	pF
Total Gate Charge	Qg	-	60	-	nC
Maximum Power Dissipation	Ptot	-	-	100	W
Junction Temperature	Tj	-55	-	150	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SK2730 with care to avoid damage to the leads and body.
   • Use ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.

2. Mounting:

   • Ensure proper alignment of the leads during mounting to avoid mechanical stress.
   • Use a heat sink if necessary to manage power dissipation and maintain the junction temperature within the specified range.

3. Biasing:

   • Apply the gate-source voltage (V(GS)) within the specified limits to avoid damaging the gate oxide.
   • Ensure the drain-source voltage (V(DS)) does not exceed the maximum rating to prevent breakdown.

4. Operating Conditions:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Monitor the drain current (I(D)) to stay within the maximum ratings to prevent overheating and potential failure.

5. Testing:

   • Use appropriate test equipment and methods to verify the parameters of the 2SK2730.
   • Refer to the datasheet for specific test conditions and procedures.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against moisture and physical damage.

(For reference only)