Details

---

BUY IPA057N08N3G https://www.utsource.net/itm/p/11546022.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
On-State Resistance	RDS(on)	-	7.0	-	m惟	VGS = 10V, ID = 2.5A
Continuous Drain Current	ID	-	-	5.7	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	-	14	A	tp = 10ms, TC = 25掳C
Gate-Source Voltage	VGS	-10	-	10	V	-
Drain-Source Breakdown Voltage	VDS(BR)	-	-	80	V	ID = 250渭A
Gate Threshold Voltage	VGS(th)	1.0	1.5	2.5	V	ID = 250渭A
Total Power Dissipation	PTOT	-	-	1.2	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature Range	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid mechanical damage.
   • Use appropriate heat sinks or cooling methods to manage the junction temperature, especially under high power dissipation conditions.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Apply the gate-source voltage (V_GS) within the specified limits to ensure reliable operation.

3. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
   • Use thermal paste or thermal interface materials to improve heat transfer between the device and the heat sink.

4. Pulse Operation:

   • For pulse drain current (I_D(p)), ensure that the pulse width (t_p) does not exceed 10ms to avoid overheating.

5. Storage:

   • Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C).

6. Testing:

   • Test the device under controlled conditions to verify its performance and reliability.
   • Use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury to personnel.

(For reference only)