1N5342B

1N5342B

Category: TransistorsDiodes

Specifications
SKU
11546110
Details

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Parameter Symbol Min Typ Max Unit
Peak Inverse Voltage VR(SM) - 300 - V
Average Rectified Current (TA = 75°C) IF(AV) - 5.0 - A
Peak Surge Current (Non-Repetitive, Tj = 25°C) ISM - 200 - A
Forward Voltage (IF = 5.0A) VF - 1.1 - V
Reverse Current (VR = 300V, TA = 25°C) IR - 5.0 - μA
Junction Operating Temperature Range Tj -55 - 175 °C
Storage Temperature Range Tstg -65 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 1N5342B with care to avoid mechanical stress.
    • Ensure proper heat sinking if operating at high currents to maintain junction temperature within specified limits.
  2. Electrical Connections:

    • Connect the anode to the positive side of the circuit and the cathode to the negative side.
    • Ensure that the peak inverse voltage does not exceed 300V to prevent breakdown.
  3. Thermal Management:

    • Use a heatsink if the device is expected to dissipate significant power (PD = VF × IF(AV)).
    • Monitor the junction temperature to ensure it stays below 175°C.
  4. Surge Current:

    • The device can handle peak surge currents up to 200A, but this should be non-repetitive to avoid damage.
  5. Storage:

    • Store the device in a dry, cool place within the temperature range of -65°C to 150°C.
  6. Testing:

    • Test the device under controlled conditions to verify its performance before integrating it into the final application.
(For reference only)

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