Details

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BUY 8N60L-B-TF2-T https://www.utsource.net/itm/p/11546330.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Breakdown Voltage	V(BR)DSS	-	600	-	V
Drain-Source On-State Resistance	RDS(on)	-	1.3	-	惟 @ 25掳C, VGS = 10V
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	@ ID = 250 渭A, VDS = 10V
Continuous Drain Current	ID	-	8.0	-	A	@ Tc = 25掳C, VGS = 10V
Pulse Drain Current	IDM	-	48	-	A	@ tP = 10 渭s, VGS = 10V
Total Power Dissipation	PD	-	120	-	W	@ Tc = 25掳C
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Maximum Operating Junction Temperature	TMAX	-	-	175	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the 8N60L-B-TF2-T with care to avoid damage to the leads or the die.
   • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure that the device is securely mounted to a heatsink if operating at high power levels.
   • Use thermal paste or thermal tape to improve heat transfer between the device and the heatsink.

3. Biasing:

   • Apply the gate voltage (VGS) carefully to ensure it stays within the specified range to avoid damage.
   • Use a gate resistor to limit the current and protect the gate from overvoltage.

4. Operating Conditions:

   • Do not exceed the maximum ratings for drain-source voltage (VDS), drain current (ID), and power dissipation (PD).
   • Monitor the junction temperature (TJ) to ensure it remains within safe limits.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect it from moisture and physical damage.

6. Testing:

   • Use a suitable test setup to verify the parameters before integrating the device into a circuit.
   • Ensure that all test equipment is properly calibrated and grounded.

7. Soldering:

   • Use a controlled soldering process to avoid overheating the device.
   • Follow the recommended soldering profile provided by the manufacturer.

8. Circuit Design:

   • Design the circuit to handle the transient conditions such as inrush currents and voltage spikes.
   • Include appropriate protection circuits like snubbers to prevent damage from voltage transients.

By following these guidelines, you can ensure reliable and efficient operation of the 8N60L-B-TF2-T MOSFET.

(For reference only)