STF17NF25

STF17NF25

Category: Transistors

Specifications
SKU
11546391
Details

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Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - - 250 V -
Gate-Source Voltage VGS -15 - 15 V -
Continuous Drain Current ID - - 17 A TC = 25掳C
Continuous Drain Current ID - - 13.6 A TC = 100掳C
Pulse Drain Current ID(p) - - 40 A tp = 10 渭s, TC = 25掳C
Gate Charge QG - 12 18 nC VGS = 15V
Input Capacitance Ciss - 1150 1900 pF VDS = 15V, f = 1 MHz
Output Capacitance Coss - 260 400 pF VDS = 15V, f = 1 MHz
Reverse Transfer Capacitance Crss - 150 240 pF VDS = 15V, f = 1 MHz
On-State Resistance RDS(on) - 0.065 0.085 VGS = 10V, ID = 17A, TC = 25掳C
On-State Resistance RDS(on) - 0.075 0.095 VGS = 10V, ID = 13.6A, TC = 100掳C
Total Power Dissipation PTOT - - 200 W TC = 25掳C
Junction Temperature TJ - - 150 掳C -
Storage Temperature TSTG -55 - 150 掳C -

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain the junction temperature within safe limits.
    • Handle with care to avoid damage to the pins and body.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use appropriate gate drive circuits to ensure reliable switching.
  3. Thermal Management:

    • Ensure adequate cooling to prevent overheating, especially during high current or high-frequency operation.
    • Monitor the junction temperature to avoid exceeding the maximum rating.
  4. Gate Drive:

    • Apply the correct gate-source voltage (VGS) to turn the MOSFET on and off.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  5. Overvoltage Protection:

    • Implement overvoltage protection to safeguard against voltage spikes that could exceed the maximum drain-source voltage (VDS).
  6. Storage and Transportation:

    • Store in a dry, cool place away from direct sunlight and sources of heat.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage.
  7. Testing:

    • Perform initial testing under controlled conditions to verify proper operation.
    • Regularly inspect for signs of wear or damage.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)

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