TIP147TU

TIP147TU

Category: Transistors

Specifications
SKU
11547125
Details

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Parameter Symbol Min Typ Max Unit Notes
Collector-Emitter Voltage VCEO - - 100 V Maximum voltage between collector and emitter with the base open.
Emitter-Collector Voltage VEBO - - 5 V Maximum voltage between emitter and base with the collector open.
Base-Emitter Voltage VBE - 1.2 2.5 V Maximum voltage between base and emitter.
Continuous Collector Current IC - - 10 A Maximum continuous current through the collector.
Pulse Collector Current IC(P) - - 50 A Maximum pulse current through the collector (tP = 8.3 ms).
Power Dissipation PT - - 65 W Maximum power dissipation at TA = 25掳C.
Storage Temperature Range TSTG -65 - 150 掳C Operating temperature range for storage.
Junction Temperature TJ - - 150 掳C Maximum junction temperature.

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the maximum power dissipation.
    • Use a thermal compound between the transistor and the heatsink for better thermal conductivity.
  2. Biasing:

    • The TIP147TU is a Darlington transistor, which means it has a higher base-emitter voltage compared to a single transistor.
    • Use a base resistor to limit the base current and prevent damage to the transistor.
  3. Current Handling:

    • Do not exceed the maximum continuous collector current (IC) or the pulse collector current (IC(P)).
    • For high current applications, ensure that the pulse duration does not exceed the specified time to avoid overheating.
  4. Voltage Ratings:

    • Do not exceed the maximum collector-emitter voltage (VCEO) or the base-emitter voltage (VBE).
    • The emitter-base voltage (VEBO) should also be within the specified limits.
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.
    • Use appropriate cooling methods such as forced air or larger heatsinks for high-power applications.
  6. Storage:

    • Store the TIP147TU in a dry environment within the specified storage temperature range (-65掳C to 150掳C).
  7. Handling:

    • Handle the transistor with care to avoid mechanical stress or damage to the leads.
    • Use anti-static precautions to prevent electrostatic discharge (ESD) damage.

By following these guidelines, you can ensure reliable operation and longevity of the TIP147TU transistor.

(For reference only)

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