Details
BUY TIP147TU https://www.utsource.net/itm/p/11547125.html
Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 100 | V | Maximum voltage between collector and emitter with the base open. |
Emitter-Collector Voltage | VEBO | - | - | 5 | V | Maximum voltage between emitter and base with the collector open. |
Base-Emitter Voltage | VBE | - | 1.2 | 2.5 | V | Maximum voltage between base and emitter. |
Continuous Collector Current | IC | - | - | 10 | A | Maximum continuous current through the collector. |
Pulse Collector Current | IC(P) | - | - | 50 | A | Maximum pulse current through the collector (tP = 8.3 ms). |
Power Dissipation | PT | - | - | 65 | W | Maximum power dissipation at TA = 25掳C. |
Storage Temperature Range | TSTG | -65 | - | 150 | 掳C | Operating temperature range for storage. |
Junction Temperature | TJ | - | - | 150 | 掳C | Maximum junction temperature. |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage the maximum power dissipation.
- Use a thermal compound between the transistor and the heatsink for better thermal conductivity.
Biasing:
- The TIP147TU is a Darlington transistor, which means it has a higher base-emitter voltage compared to a single transistor.
- Use a base resistor to limit the base current and prevent damage to the transistor.
Current Handling:
- Do not exceed the maximum continuous collector current (IC) or the pulse collector current (IC(P)).
- For high current applications, ensure that the pulse duration does not exceed the specified time to avoid overheating.
Voltage Ratings:
- Do not exceed the maximum collector-emitter voltage (VCEO) or the base-emitter voltage (VBE).
- The emitter-base voltage (VEBO) should also be within the specified limits.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.
- Use appropriate cooling methods such as forced air or larger heatsinks for high-power applications.
Storage:
- Store the TIP147TU in a dry environment within the specified storage temperature range (-65掳C to 150掳C).
Handling:
- Handle the transistor with care to avoid mechanical stress or damage to the leads.
- Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
By following these guidelines, you can ensure reliable operation and longevity of the TIP147TU transistor.
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