Details

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BUY FTP11N08A https://www.utsource.net/itm/p/11547658.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	80	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	11	-	A	TC = 25掳C
Pulse Drain Current	IDpeak	-	33	-	A	tp = 10 ms, TC = 25掳C
Power Dissipation	PD	-	-	110	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (V_DS) does not exceed 80V.
   • The gate-source voltage (V_GS) should be within -20V to +20V.

2. Current Handling:

   • The continuous drain current (I_D) should not exceed 11A at a case temperature (T_C) of 25掳C.
   • For pulse conditions, the peak drain current (I_Dpeak) can go up to 33A for a pulse duration (t_p) of 10 ms at a case temperature of 25掳C.

3. Power Dissipation:

   • The maximum power dissipation (P_D) is 110W at a case temperature of 25掳C. Ensure adequate heat sinking to manage power dissipation effectively.

4. Temperature Considerations:

   • The junction temperature (T_J) must not exceed 150掳C.
   • Store the device in an environment with temperatures ranging from -65掳C to 150掳C.

5. Handling and Mounting:

   • Handle the device with care to avoid mechanical damage.
   • Use appropriate mounting techniques to ensure good thermal contact with the heat sink.

6. Electrostatic Discharge (ESD) Protection:

   • Follow ESD precautions during handling and installation to prevent damage to the device.

7. Testing and Operation:

   • Perform initial testing and operation under controlled conditions to ensure the device operates within specified parameters.

8. Compliance and Standards:

   • Ensure compliance with relevant safety and performance standards as specified by the manufacturer.

(For reference only)