Details

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BUY MMBT5551 G1 https://www.utsource.net/itm/p/11548911.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	30	V
Collector-Base Voltage	VCBO	40	V
Emitter-Base Voltage	VEBO	6	V
Continuous Collector Current	IC	150	mA
Power Dissipation	PT	310	mW
Operating Junction Temperature	TJ	-55 to 150	掳C
Storage Temperature Range	TSTG	-65 to 150	掳C
Transition Frequency	fT	300	MHz

Instructions for Using MMBT5551 G1

1. Mounting and Handling:

   • Handle the device with care to avoid mechanical damage.
   • Use appropriate anti-static precautions to prevent electrostatic discharge (ESD) damage.

2. Soldering:

   • Solder the device at a temperature not exceeding 260掳C for no more than 10 seconds.
   • Ensure that the soldering iron is properly grounded to avoid ESD damage.

3. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly to avoid damage.
   • Use a suitable heatsink if the device will operate near its maximum power dissipation.

4. Operating Conditions:

   • Ensure that the operating junction temperature remains within the specified range (-55掳C to 150掳C).
   • Do not exceed the maximum ratings for voltage and current to prevent device failure.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use to protect against ESD.

6. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the device before installation.
   • Follow standard testing procedures to ensure accurate results.

7. Applications:

   • The MMBT5551 G1 is suitable for a wide range of applications including amplifiers, switches, and RF circuits.
   • Refer to the datasheet for specific application notes and circuit examples.

(For reference only)