FDC6401N

Category: Transistors

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-20		60	V	Continuous operating voltage
Gate-Source Voltage	VGS	-12		12	V	Maximum gate-source voltage
Continuous Drain Current	ID		3.4	7	A	Continuous current at TJ = 25°C
Pulse Drain Current	IDpeak		10		A	Pulse current, t = 10 μs
RDS(on) @ VGS=4.5V			50		mΩ	On-resistance at VGS = 4.5V
RDS(on) @ VGS=10V			38		mΩ	On-resistance at VGS = 10V
Gate Charge	QG		19		nC	Total gate charge
Input Capacitance	Ciss		1000		pF	Input capacitance
Output Capacitance	Coss		250		pF	Output capacitance
Reverse Transfer Capacitance	Crss		120		pF	Reverse transfer capacitance
Junction to Ambient Thermal Resistance	RθJA		62		°C/W	Thermal resistance, junction to ambient

Voltage Handling:
- Ensure that the drain-source voltage (VDS) does not exceed 60V and stays above -20V.
- The gate-source voltage (VGS) should be within ±12V.
Current Management:
- For continuous operation, keep the drain current (ID) below 7A at room temperature (TJ = 25°C).
- For short pulses up to 10 μs, the device can handle up to 10A.
Temperature Considerations:
- Monitor the junction temperature (TJ) to ensure it remains within safe operating limits. Use the thermal resistance (RθJA) value for heat dissipation calculations.
Capacitance and Switching:
- Be aware of the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances when designing switching circuits. These affect switching speeds and efficiency.
Gate Drive Requirements:
- Account for the total gate charge (QG) when selecting a driver circuit. This affects switching losses and speed.
On-Resistance (RDS(on)):
- Utilize the on-resistance values at different gate voltages (4.5V and 10V) to optimize performance in your specific application.

Ensure all parameters are considered based on the specific requirements of your design to achieve optimal performance and reliability.

(For reference only)

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