FDC6401N

FDC6401N


Specifications
Details

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Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS -20 60 V Continuous operating voltage
Gate-Source Voltage VGS -12 12 V Maximum gate-source voltage
Continuous Drain Current ID 3.4 7 A Continuous current at TJ = 25掳C
Pulse Drain Current IDpeak 10 A Pulse current, t = 10 渭s
RDS(on) @ VGS=4.5V 50 m惟 On-resistance at VGS = 4.5V
RDS(on) @ VGS=10V 38 m惟 On-resistance at VGS = 10V
Gate Charge QG 19 nC Total gate charge
Input Capacitance Ciss 1000 pF Input capacitance
Output Capacitance Coss 250 pF Output capacitance
Reverse Transfer Capacitance Crss 120 pF Reverse transfer capacitance
Junction to Ambient Thermal Resistance R胃JA 62 掳C/W Thermal resistance, junction to ambient

Instructions for Use:

  1. Voltage Handling:

    • Ensure that the drain-source voltage (VDS) does not exceed 60V and stays above -20V.
    • The gate-source voltage (VGS) should be within 卤12V.
  2. Current Management:

    • For continuous operation, keep the drain current (ID) below 7A at room temperature (TJ = 25掳C).
    • For short pulses up to 10 渭s, the device can handle up to 10A.
  3. Temperature Considerations:

    • Monitor the junction temperature (TJ) to ensure it remains within safe operating limits. Use the thermal resistance (R胃JA) value for heat dissipation calculations.
  4. Capacitance and Switching:

    • Be aware of the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances when designing switching circuits. These affect switching speeds and efficiency.
  5. Gate Drive Requirements:

    • Account for the total gate charge (QG) when selecting a driver circuit. This affects switching losses and speed.
  6. On-Resistance (RDS(on)):

    • Utilize the on-resistance values at different gate voltages (4.5V and 10V) to optimize performance in your specific application.

Ensure all parameters are considered based on the specific requirements of your design to achieve optimal performance and reliability.

(For reference only)

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