Details

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BUY IRLML0060TRPBF https://www.utsource.net/itm/p/11549376.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	30	-	V
Gate-Source Voltage	VGS	-20	-	12	V
Continuous Drain Current	ID	-	0.9	-	A	TC = 25掳C, VDS = 5V
Pulse Drain Current	IDpeak	-	2.7	-	A	tp = 10 ms, TC = 25掳C, VDS = 5V
Gate Charge	QG	-	1.4	-	nC	VGS = 4.5V, ID = 0.3A
Input Capacitance	Ciss	-	120	-	pF	VDS = 10V, f = 1 MHz
Output Capacitance	Coss	-	28	-	pF	VDS = 10V, f = 1 MHz
Total Gate Charge	Qg	-	1.4	-	nC	VGS = 4.5V, ID = 0.3A
RDS(on) at VGS = 4.5V	RDS(on)	-	0.65	-	惟	TJ = 25掳C
RDS(on) at VGS = 2.5V	RDS(on)	-	1.2	-	惟	TJ = 25掳C
Junction to Ambient Thermal Resistance	R胃JA	-	140	-	掳C/W
Junction to Case Thermal Resistance	R胃JC	-	35	-	掳C/W
Maximum Junction Temperature	TJ(max)	-	-	150	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C

Instructions for Use:

1. Power Supply and Biasing:

   • Ensure that the gate-source voltage (V_GS) is within the specified range (-20V to 12V) to avoid damage.
   • The drain-source voltage (V_DS) should not exceed 30V.

2. Current Handling:

   • The continuous drain current (I_D) should not exceed 0.9A at 25掳C case temperature.
   • For pulse applications, the peak drain current (I_Dpeak) can be up to 2.7A for a 10ms pulse duration at 25掳C case temperature.

3. Thermal Management:

   • The junction temperature (T_J) should be kept below 150掳C to ensure reliable operation.
   • Use appropriate heat sinks or cooling methods to manage thermal resistance (R_胃JA and R_胃JC).

4. Capacitance and Switching:

   • Be aware of the input capacitance (C_iss) and output capacitance (C_oss) when designing switching circuits to minimize switching losses.
   • The total gate charge (Q_g) affects the switching speed; ensure your driver can handle the required charge.

5. Storage and Handling:

   • Store the device in a dry, cool place within the storage temperature range (-65掳C to 150掳C).
   • Handle with care to avoid static discharge, which can damage the MOSFET.

6. Testing and Verification:

   • Before integrating into a circuit, verify the device parameters using a suitable test setup.
   • Ensure all connections are secure and correct to prevent damage during testing.

(For reference only)