Details
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Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Continuous Drain Current | ID | TC = 25掳C | - | 2.0 | - | A |
Pulse Drain Current | ID(P) | TC = 25掳C, tP = 10 ms | - | 6.0 | - | A |
Drain-Source Breakdown Voltage | BVDSS | TA = 25掳C | 20 | - | 30 | V |
Gate-Source Voltage | VGS | - | -10 | - | 10 | V |
Gate Threshold Voltage | VGS(th) | ID = 250 渭A, TA = 25掳C | 1.0 | 2.0 | 3.0 | V |
On-State Resistance | RDS(on) | VGS = 10 V, ID = 2.0 A, TA = 25掳C | - | 0.05 | - | 惟 |
Total Power Dissipation | PTOT | TC = 25掳C | - | - | 30 | W |
Junction Temperature | TJ | - | - | - | 150 | 掳C |
Instructions for Use:
Mounting and Handling:
- Ensure that the device is handled with care to avoid mechanical stress.
- Use appropriate soldering techniques to prevent thermal damage during assembly.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals as per the circuit diagram.
- Ensure that the gate-source voltage (VGS) does not exceed the maximum ratings to avoid damage.
Thermal Management:
- Provide adequate heat sinking to manage the junction temperature (TJ) within safe limits.
- Monitor the device temperature during operation to ensure it does not exceed 150掳C.
Operating Conditions:
- Operate the device within the specified continuous drain current (ID) and pulse drain current (ID(P)) limits.
- Ensure the drain-source voltage (BVDSS) does not exceed the maximum rating.
Storage and Transportation:
- Store the device in a dry, cool place away from direct sunlight.
- Follow ESD (Electrostatic Discharge) precautions to avoid damage during handling and storage.
Testing:
- Use appropriate test equipment to verify the device parameters before and after installation.
- Perform functional tests under the specified operating conditions to ensure reliable performance.
Safety Precautions:
- Always follow safety guidelines when working with high voltages and currents.
- Use protective gear and ensure proper grounding to prevent electrical hazards.
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