SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

Category: Transistors

Specifications
SKU
11551845
Details

BUY SI2309CDS-T1-GE3 https://www.utsource.net/itm/p/11551845.html

Parameter Description Value
Part Number Full Part Number SI2309CDS-T1-GE3
Type Device Type N-Channel MOSFET
Package Package Type TO-252 (DPAK)
VDSS Drain-to-Source Voltage 60V
RDS(on) On-State Resistance at VGS = 10V 8.5m惟
ID Continuous Drain Current 14A
Ptot Total Power Dissipation (Ta = 25掳C) 2.2W
Qg Total Gate Charge 27nC
fmax Maximum Operating Frequency 5MHz
VGS(th) Gate Threshold Voltage 1.0V to 2.5V
TJ Junction Temperature Range -55掳C to 150掳C
Storage Temperature Range Storage Temperature -65掳C to 150掳C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is handled with care to avoid damage to the leads or the body.
    • Follow proper ESD (Electrostatic Discharge) precautions to prevent damage to the MOSFET.
  2. Soldering:

    • Use a soldering iron with a temperature setting between 260掳C and 300掳C.
    • Solder each lead for no more than 5 seconds.
    • Allow the device to cool naturally after soldering.
  3. Thermal Management:

    • Ensure adequate heat sinking to maintain the junction temperature within the specified range.
    • Use thermal paste or a thermal pad to improve heat transfer from the device to the heatsink.
  4. Electrical Connections:

    • Connect the drain, source, and gate terminals correctly to avoid damage.
    • Ensure that the gate voltage does not exceed the maximum ratings.
    • Use decoupling capacitors close to the power supply pins to reduce noise and improve stability.
  5. Operating Conditions:

    • Operate the device within the specified voltage and current limits.
    • Monitor the temperature of the device during operation to ensure it does not exceed the maximum junction temperature.
  6. Testing:

    • Use a multimeter or an oscilloscope to verify the correct operation of the MOSFET.
    • Test the device under load conditions to ensure it meets the required performance specifications.
  7. Storage:

    • Store the device in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use to protect against moisture and static damage.
(For reference only)

View more about SI2309CDS-T1-GE3 on main site