Details

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BUY FMMT618TA https://www.utsource.net/itm/p/11551916.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	-	30	V
Emitter-Base Voltage	VEB	-5.0	-	-	V
Collector-Base Voltage	VCB	-	-	30	V
Continuous Collector Current	IC	-	-	200	mA
Collector Power Dissipation	PT	-	-	350	mW
DC Current Gain (hFE)	hFE	100	300	700	-
Transition Frequency	fT	-	300	-	MHz
Storage Temperature Range	TSTG	-65	-	150	掳C
Operating Temperature Range	TA	-65	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the FMMT618TA with care to avoid damage to the leads and the body.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure that the leads are bent carefully to avoid excessive stress on the device.
   • Soldering should be done quickly to prevent overheating. The maximum soldering temperature is 260掳C for 10 seconds.

3. Biasing:

   • Apply the correct biasing voltages to ensure the transistor operates within its safe operating area (SOA).
   • Avoid exceeding the maximum ratings for V_CE, V_EB, V_CB, I_C, and P_T.

4. Thermal Management:

   • Ensure adequate heat dissipation if the device is expected to operate near its maximum power dissipation.
   • Consider using a heatsink if necessary.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and extreme temperatures.
   • Follow the recommended storage temperature range to avoid damage.

6. Testing:

   • When testing the device, use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury.

7. Applications:

   • The FMMT618TA is suitable for high-frequency switching and amplification applications.
   • It can be used in RF circuits, oscillators, and other high-speed digital and analog circuits.

(For reference only)