Details

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BUY FDD4243 https://www.utsource.net/itm/p/11552049.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VCC	4.5	-	5.5	V	Operating supply voltage range
Continuous Drain Current	ID(cont)	-	10	-	A	Continuous drain current at TA = 25°C
Peak Pulse Current	ID(peak)	-	20	-	A	Peak pulse current, tp ≤ 300 μs
Gate-Source Voltage	VGS	-10	-	10	V	Gate-to-source voltage range
Drain-Source Breakdown Voltage	VDS(BR)	40	-	45	V	Drain-to-source breakdown voltage
RDS(on) at VGS = 4.5V	RDS(on)	-	6.5	-	mΩ	On-state resistance at VGS = 4.5V
RDS(on) at VGS = 5.0V	RDS(on)	-	5.5	-	mΩ	On-state resistance at VGS = 5.0V
Input Capacitance	Ciss	-	180	-	pF	Input capacitance at VDS = 10V
Output Capacitance	Coss	-	45	-	pF	Output capacitance at VDS = 10V
Reverse Transfer Capacitance	Crss	-	10	-	pF	Reverse transfer capacitance at VDS = 10V
Total Gate Charge	QG	-	12	-	nC	Total gate charge at VDS = 10V
Gate-Source Threshold Voltage	VGS(th)	1.0	1.5	2.0	V	Gate-source threshold voltage
Junction Temperature	TJ	-55	-	150	°C	Operating junction temperature range
Storage Temperature	TSTG	-55	-	150	°C	Storage temperature range

Instructions for Use:

1. Supply Voltage (V_CC):

   • Ensure the supply voltage is within the specified range of 4.5V to 5.5V to avoid damage to the device.

2. Continuous Drain Current (I_D(cont)):

   • The device can handle a continuous drain current of up to 10A at ambient temperature (T_A = 25°C). For higher temperatures, derate the current accordingly.

3. Peak Pulse Current (I_D(peak)):

   • The peak pulse current should not exceed 20A for pulses shorter than 300 μs to prevent overheating.

4. Gate-Source Voltage (V_GS):

   • Apply a gate-source voltage between -10V and 10V. Exceeding these limits can cause permanent damage.

5. Drain-Source Breakdown Voltage (V_DS(BR)):

   • The device is rated to withstand a drain-source voltage of up to 45V. Ensure that the applied voltage does not exceed this limit.

6. On-State Resistance (R_DS(on)):

   • The on-state resistance varies with the gate-source voltage. Use the provided values to estimate power dissipation and efficiency.

7. Capacitances (C_iss, C_oss, C_rss):

   • These capacitances affect switching performance. Use them to design appropriate gate drive circuits and snubber networks.

8. Total Gate Charge (Q_G):

   • The total gate charge impacts the switching speed and energy required to turn the device on and off. Consider this when designing the gate drive circuit.

9. Gate-Source Threshold Voltage (V_GS(th)):

   • The device starts conducting when the gate-source voltage exceeds the threshold voltage. This value helps in setting the correct gate drive levels.

10. Temperature Ranges:

    • Operate the device within the specified junction temperature range (-55°C to 150°C) and storage temperature range (-55°C to 150°C) to ensure reliability and longevity.

11. Handling Precautions:

    • Handle the device with care to avoid static discharge, which can damage the sensitive components. Use proper ESD protection measures.

12. Mounting and Layout:

    • Ensure good thermal management by using appropriate heatsinks and thermal interface materials. Follow recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

By following these parameters and instructions, you can ensure optimal performance and reliability of the FDD4243 MOSFET.

(For reference only)