Details

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BUY IRGIB15B60KD1PBF https://www.utsource.net/itm/p/11552102.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCE	-	-	600	V	Maximum voltage between collector and emitter with the gate open.
Gate-Emitter Voltage	VGE	-15	-	15	V	Maximum voltage between gate and emitter.
Continuous Collector Current	IC	-	-	15	A	Maximum continuous current through the collector.
Pulse Collector Current	IC(pulse)	-	-	30	A	Maximum pulse current through the collector (tp = 10 ms, duty cycle = 1%).
Power Dissipation	PTOT	-	-	240	W	Maximum total power dissipation.
Junction Temperature	TJ	-55	-	175	°C	Operating junction temperature range.
Storage Temperature	TSTG	-55	-	150	°C	Temperature range for storage.
Thermal Resistance, Junction to Case	RthJC	-	0.45	-	K/W	Thermal resistance from the junction to the case.

Instructions:

1. Handling Precautions: The IRGIB15B60KD1PBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
2. Mounting: Ensure good thermal contact between the device and the heatsink. Apply a thin layer of thermal compound to enhance heat transfer.
3. Biasing: The gate-emitter voltage (V_GE) should be kept within the specified limits to avoid damage to the device.
4. Current Limiting: Do not exceed the maximum continuous collector current (I_C) or pulse collector current (I_C(pulse)) ratings.
5. Power Dissipation: Ensure that the total power dissipation (P_TOT) does not exceed the maximum rating. Proper heatsinking is essential for high-power applications.
6. Temperature Management: Operate the device within the specified junction temperature (T_J) and storage temperature (T_STG) ranges to prevent thermal damage.
7. Thermal Resistance: Consider the thermal resistance (R_thJC) when designing the cooling system to ensure effective heat dissipation.
8. Storage: Store the device in a dry, cool environment within the specified storage temperature range to maintain its performance characteristics.

(For reference only)