Details

---

BUY 2SD882/2SB772 https://www.utsource.net/itm/p/11552121.html

Parameter	2SD882 (NPN)	2SB772 (PNP)
Type	NPN Bipolar Transistor	PNP Bipolar Transistor
Collector-Emitter Voltage (VCEO)	200 V	200 V
Emitter-Base Voltage (VEBO)	5 V	5 V
Collector-Base Voltage (VCBO)	200 V	200 V
Continuous Collector Current (IC)	1.5 A	1.5 A
Power Dissipation (PD)	30 W	30 W
Transition Frequency (fT)	15 MHz	15 MHz
Storage Temperature Range (Tstg)	-55°C to +150°C	-55°C to +150°C
Operating Temperature Range (Toper)	-55°C to +150°C	-55°C to +150°C

Instructions for Use:

General Handling:

• ESD Protection: Both transistors are sensitive to electrostatic discharge. Handle with appropriate ESD precautions.
• Mounting: Ensure proper heat sinking if operating near maximum power dissipation.

Circuit Design:

• Biasing: Ensure correct biasing conditions to avoid saturation and cutoff regions unless intended.
• Heat Management: Monitor junction temperature to prevent overheating, especially at high current levels.
• Derating: For continuous operation, consider derating the collector current and power dissipation based on ambient temperature.

Application Tips:

• NPN (2SD882): Suitable for low-side switching applications where the emitter is connected to ground.
• PNP (2SB772): Ideal for high-side switching applications where the emitter is connected to a positive supply voltage.

These parameters and guidelines should help in effectively integrating the 2SD882 and 2SB772 transistors into your circuit designs.

(For reference only)