Details

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BUY IPA60R600P6 https://www.utsource.net/itm/p/11552144.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Continuous Drain Current	ID	-	60	-	A	Tc = 25掳C, VGS = 10V
Pulse Drain Current	ID pulsed	-	120	-	A	tp = 10渭s, IFSM = 120A, Tc = 25掳C, VGS = 10V
Gate-Source Voltage	VGS	-20	-	20	V	-
Drain-Source Breakdown Voltage	BVdss	-	600	-	V	-
On-State Resistance	RDS(on)	-	0.60	-	惟	VGS = 10V, ID = 60A, Tc = 25掳C
Gate Charge	Qg	-	80	-	nC	VGS = 10V, ID = 60A
Input Capacitance	Ciss	-	3900	-	pF	VDS = 450V, VGS = 0V to 10V
Output Capacitance	Coss	-	1050	-	pF	VDS = 450V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	1100	-	pF	VDS = 450V, VGS = 0V to 10V
Total Switching Energy	Esw	-	3.5	-	渭J	VDS = 450V, ID = 60A, f = 100kHz, VGS = 10V
Turn-On Delay Time	tdon	-	75	-	ns	VDS = 450V, ID = 60A, VGS = 10V, RL = 1惟
Rise Time	tr	-	65	-	ns	VDS = 450V, ID = 60A, VGS = 10V, RL = 1惟
Turn-Off Delay Time	tdoff	-	85	-	ns	VDS = 450V, ID = 60A, VGS = 10V, RL = 1惟
Fall Time	tf	-	55	-	ns	VDS = 450V, ID = 60A, VGS = 10V, RL = 1惟
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature Range	Tstg	-55	-	150	掳C	-

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid static damage.
   • Mount the device on a heatsink to maintain junction temperature within safe limits.

2. Biasing:

   • Apply gate-source voltage (VGS) between -20V and +20V.
   • For optimal performance, use VGS = 10V for on-state operation.

3. Current Limitation:

   • Do not exceed the continuous drain current (ID) of 60A or the pulse drain current (ID pulsed) of 120A.
   • Ensure adequate cooling to handle high current pulses.

4. Voltage Ratings:

   • Do not exceed the drain-source breakdown voltage (BVdss) of 600V.
   • Ensure that the gate-source voltage (VGS) is within the specified range to prevent damage.

5. Thermal Management:

   • Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.
   • Use appropriate thermal interfaces and heatsinks to dissipate heat effectively.

6. Capacitance Considerations:

   • Account for input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in circuit design to minimize switching losses.

7. Switching Performance:

   • Optimize the switching times (tdon, tr, tdoff, tf) by selecting appropriate gate resistors and driver circuits to reduce switching losses and improve efficiency.

8. Storage:

   • Store the device in a dry, cool environment within the storage temperature range (-55掳C to 150掳C).

By following these guidelines, you can ensure reliable and efficient operation of the IPA60R600P6 MOSFET.

(For reference only)