Details

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BUY NTE1212MC https://www.utsource.net/itm/p/11552229.html

Parameter	Description	Value
Part Number	Component Identifier	NTE1212MC
Type	Component Type	Bipolar Transistor
Polarity	Transistor Polarity	NPN
Collector-Emitter Voltage (Vceo)	Maximum Collector-Emitter Voltage	60 V
Emitter-Base Voltage (Vebo)	Maximum Emitter-Base Voltage	5 V
Collector Current (Ic)	Continuous Collector Current	800 mA
Power Dissipation (Ptot)	Total Power Dissipation	625 mW
Hfe (DC Current Gain)	DC Current Gain (Min/Max)	100 / 300
Transition Frequency (ft)	Transition Frequency	300 MHz
Operating Temperature Range	Temperature Range for Operation	-55掳C to +150掳C
Storage Temperature Range	Temperature Range for Storage	-65掳C to +150掳C
Package	Physical Package Type	TO-92
Mounting Style	Mounting Method	Through-Hole

Instructions for Use:

1. Handling Precautions:

   • Handle the NTE1212MC with care to avoid static damage.
   • Use proper anti-static measures, such as wrist straps and mats.

2. Soldering:

   • Solder the transistor at a temperature of 350掳C for no more than 3 seconds per connection.
   • Allow the component to cool naturally after soldering to prevent thermal shock.

3. Circuit Design:

   • Ensure that the operating conditions do not exceed the maximum ratings listed in the table.
   • Use appropriate heat sinks if the power dissipation is expected to be high.
   • Place the transistor in a well-ventilated area to facilitate heat dissipation.

4. Testing:

   • Test the transistor using a multimeter or a transistor tester to verify its functionality.
   • Check for continuity between the base, collector, and emitter terminals.

5. Storage:

   • Store the NTE1212MC in a dry, cool place away from direct sunlight.
   • Keep the components in their original packaging until ready for use.

6. Disposal:

   • Dispose of the NTE1212MC according to local environmental regulations.
   • Do not dispose of electronic components in household waste.

(For reference only)