Details

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BUY 2SC3281,2SA1302 https://www.utsource.net/itm/p/11552809.html

Parameter	2SC3281 (NPN)	2SA1302 (PNP)
Type	NPN Transistor	PNP Transistor
Collector-Emitter Voltage (Vceo)	80 V	80 V
Emitter-Base Voltage (Vebo)	5 V	5 V
Collector-Base Voltage (Vcbo)	80 V	80 V
Collector Current (Ic)	15 A	15 A
Power Dissipation (Ptot)	200 W	200 W
Hfe (DC Current Gain)	20 - 100	20 - 100
Transition Frequency (ft)	4 MHz	4 MHz
Storage Temperature Range (Tstg)	-55°C to +150°C	-55°C to +150°C
Operating Temperature Range (Tamb)	-55°C to +150°C	-55°C to +150°C
Package Type	TO-3	TO-3

Instructions for Use:

2SC3281 (NPN):

1. Biasing: Ensure that the base-emitter voltage (Vbe) is positive and within the specified range (typically 0.6 to 0.7 V).
2. Heat Dissipation: Use a heatsink if the power dissipation exceeds the maximum allowed without it.
3. Current Limiting: Use appropriate resistors to limit the base current and prevent excessive collector current.
4. Reverse Polarity Protection: Avoid applying reverse polarity to the collector and emitter.
5. Storage: Store in a dry place away from extreme temperatures.

2SA1302 (PNP):

1. Biasing: Ensure that the base-emitter voltage (Vbe) is negative and within the specified range (typically -0.6 to -0.7 V).
2. Heat Dissipation: Use a heatsink if the power dissipation exceeds the maximum allowed without it.
3. Current Limiting: Use appropriate resistors to limit the base current and prevent excessive collector current.
4. Reverse Polarity Protection: Avoid applying reverse polarity to the collector and emitter.
5. Storage: Store in a dry place away from extreme temperatures.

(For reference only)