Details

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BUY 2SC3281 https://www.utsource.net/itm/p/11552810.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	80	V
Collector-Base Voltage	VCB	-	-	80	V
Emitter-Base Voltage	VEB	-5	-	5	V
Collector Current	IC	-	15	15	A
Base Current	IB	-	3	3	A
Power Dissipation	PT	-	-	90	W
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-65	-	150	°C
Thermal Resistance	RθJC	-	-	1.5	°C/W

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.

2. Biasing:

   • Set the base current (I_B) to ensure the transistor operates in the desired region (saturation, active, or cutoff).
   • Avoid exceeding the maximum base current to prevent damage.

3. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CE) and collector-base voltage (V_CB).
   • Ensure the emitter-base voltage (V_EB) remains within the specified range to avoid reverse breakdown.

4. Current Handling:

   • The collector current (I_C) should not exceed the maximum rating to prevent overheating and potential failure.
   • Monitor the power dissipation (P_T) to ensure it stays within the safe operating area.

5. Temperature Management:

   • Keep the junction temperature (T_J) within the specified range to ensure reliable operation.
   • Store the transistor in a controlled environment within the storage temperature range (T_STG).

6. Handling:

   • Handle the transistor with care to avoid mechanical damage.
   • Use appropriate ESD protection to prevent damage from static electricity.

7. Testing:

   • Test the transistor parameters using a suitable test setup to ensure it meets the specifications.
   • Verify the thermal resistance (R_θJC) to ensure adequate cooling during operation.

(For reference only)