Details

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BUY 2SC3281-O https://www.utsource.net/itm/p/11552811.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	400	-	V
Collector-Base Voltage	VCBO	-	500	-	V
Emitter-Base Voltage	VEBO	-	6	-	V
Collector Current (Continuous)	IC	-	15	-	A
Collector Current (Pulse)	ICM	-	30	-	A
Base Current (Continuous)	IB	-	1.5	-	A
Power Dissipation	PT	-	120	-	W
Junction Temperature	TJ	-	150	-	°C
Storage Temperature	TSTG	-55	-	150	°C
Transition Frequency	fT	-	70	-	MHz
Current Gain (hFE)	hFE	20	70	200	-

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SC3281-O with care to avoid mechanical damage.
   • Use proper anti-static measures to prevent electrostatic discharge (ESD) damage.

2. Mounting:

   • Ensure good thermal contact between the transistor and the heat sink.
   • Use a thermal compound to enhance heat dissipation.
   • Tighten the mounting screws to the recommended torque to avoid over-tightening and potential damage.

3. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly to avoid short circuits.
   • Use appropriate wire gauges to handle the current ratings.

4. Operating Conditions:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Operate within the specified temperature range to ensure reliable performance.

5. Testing:

   • Test the transistor using a suitable multimeter or transistor tester.
   • Verify the continuity and resistance values to ensure the device is functioning correctly.

6. Storage:

   • Store the 2SC3281-O in a dry, cool place away from direct sunlight.
   • Keep the devices in their original packaging until ready for use to protect against static and physical damage.

(For reference only)